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Abnormal Grain Growth in Ultra-Thin Films of Germanium on Insulator

Published online by Cambridge University Press:  22 February 2011

T. Yonehara ,
C.V. Tihompson  and
Henry I. Smith
T. Yonehara
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
C.V. Tihompson
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
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Abstract

The growth of large secondary grains with (112) texture, and solid-state agglomeration to single-crystal islands have been observed by annealing ultra-thin (less than 1000Å) films of Ge. A driving force proportional to surface-energy anisotropy and inversely proportional to film thickness is believed to be responsible for both phenomena. The temperature for agglomeration decreases with film thickness, and is further depressed by the presence of Sn vapor. Patterning Ge into stripes increases secondary grain size and population. Encapsulation with a film of SiO2 suppresses agglomeration and alters crystallographic texture. A surface-relief structure of 0.2μm period and 300Å depth induces a (100) texture in some cases, and alters the morphology of agglomerated islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 517
Copyright
Copyright © Materials Research Society 1984

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References

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