Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T01:57:44.154Z Has data issue: false hasContentIssue false

Ab-Initio Theory of Grain-Boundary Segregation in α-Alumina: Energetics, Atomistic and Electronic Structures

Published online by Cambridge University Press:  11 February 2011

Stefano Fabris
Affiliation:
Istituto Nazionale per la Fisica della Materia (INFM) and Scuola Internazionale Superiore di Studi Avanzati (SISSA), Via Beirut 2–4, Trieste I-34014, Italy. Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart, Germany.
Christian Elsässer
Affiliation:
Fraunhofer-Institut für Werkstoffmechanik, Wöhlerstr. 11–13, D-79108 Freiburg, Germany Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart, Germany.
Get access

Abstract

The modifications in atomistic structure, chemical bonding, and energetics induced by sub-stitutional cation impurities isolated in bulk and segregated at grain boundaries of α-Al2O3 were investigated by first-principles electronic-structure calculations. The dependency of these modifications on the boundary type, species and concentration of defects, was studied by selecting the following variety of systems: two different twin boundaries (the prismatic Σ3 (1010) and the pyramidal Σ13 (1014) twins), five cation impurities X (X=Ti, Sc, Y, Ca, and La), and two concentration regimes for the segregant (≈ 3 and ≈ 6 atoms/nm2). A partial covalent character is found to be a distinctive feature of the X-O bond in both bulk and interfacial atomic environments, and to drive the structural distortions of the octahedral XO6 clusters. The energetics of segregation reveals a linear relationship between segregation energy and impurity size.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fabris, S., Nufer, S., Elsässer, C., and Gemming, T., Phys. Rev. B 66, 155415 (2002).Google Scholar
2. Fabris, S. and Elsässer, C., Phys. Rev. B 64, 245117 (2001).Google Scholar
3. Fabris, S. and Elsässer, C., Acta Mater. 51, 71 (2003).Google Scholar
4. Meyer, B., Elsässer, C., and Fähnle, M., Fortran 90 Program for Mixed-Basis Pseudopotential Calculations for Crystals, Max-Planck-Institut für Metallforschung Stuttgart (unpublished).Google Scholar
5. Sutton, A. P. and Baluffi, R. W., Interfaces in Crystalline Materials (Clarendon Press, Oxford, 1995).Google Scholar