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Ab initio Simulation of Vacancy Processes in Ni3Al
Published online by Cambridge University Press: 10 February 2011
Abstract
Properties of point defects such as antisites and vacancies in Ni3A1 are studied by means of ab initio calculations for supercells. Temperature dependent quantitities such as defect formation energies are derived by means of a grandcanonical ensemble. Stimulated by experiments of residual resistivities suggesting an outstandingly large activation energy of 4.6 eV due to Al vacancies, several models for point like defects are treated in combination with calculated migration barriers for nearest neighbor jumps and also the six-jump model.
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- Copyright © Materials Research Society 1999
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