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400 element ErAs:InGaAs/InGaAlAs superlattice power generator

Published online by Cambridge University Press:  01 February 2011

Gehong Zeng ,
Je-Hyeong Bahk ,
John E. Bowers ,
Joshua M. O. Zide ,
Arthur C. Gossard ,
Yan Zhang ,
Rajeev Singh ,
Zhixi Bian ,
Ali Shakouri  and
Woochul Kim
...Show all authors
Gehong Zeng
Affiliation:
[email protected], University of California, Santa Barbara, Department of Electrical and Computer Engineering, 2221G, ESB building, Santa Barbara, CA, 93106, United States
Je-Hyeong Bahk
Affiliation:
[email protected], University of California, Santa Barbara, Department of Electrical and Computer Engineering, United States
John E. Bowers
Affiliation:
[email protected], University of California, Santa Barbara, Department of Electrical and Computer Engineering, United States
Joshua M. O. Zide
Affiliation:
[email protected], University of California, Santa Barbara, Materials Department, United States
Arthur C. Gossard
Affiliation:
[email protected], University of California, Santa Barbara, Materials Department, United States
Yan Zhang
Affiliation:
[email protected], University of California, Santa Cruz, Electrical Engineering Department, United States
Rajeev Singh
Affiliation:
[email protected], University of California, Santa Cruz, Electrical Engineering Department, United States
Zhixi Bian
Affiliation:
[email protected], University of California, Santa Cruz, Electrical Engineering Department, United States
Ali Shakouri
Affiliation:
Electrical Engineering Department, University of California, Santa Cruz, CA 95064
Woochul Kim
Affiliation:
[email protected], University of California, Berkeley, Department of Mechanical Engineering, United States
Suzanne Singer
Affiliation:
[email protected], University of California, Berkeley, Department of Mechanical Engineering, United States
Arun Majumdar
Affiliation:
[email protected], University of California, Berkeley, Department of Mechanical Engineering, United States
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Abstract

We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 µm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 µm thick and 200 µm × 200 µm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

Keywords

thermoelectricitynanostructurebonding
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F12-06
Copyright
Copyright © Materials Research Society 2006

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References

REFFERENCES

1. Snyder, G. J., Lim, J. R., Huang, C. K., and Fleurial, J. P., “Thermoelectric microdevice fabricated by a MEMS-like electrochemical process,” Nature Materials, vol. 2, pp. 528–531, 2003.Google Scholar
2. Dughaish, Z. H., “Lead telluride as a thermoelectric material for thermoelectric power generation,” Physica B-Condensed Matter, vol. 322, pp. 205–223, 2002.Google Scholar
3. Kim, I. H., “(Bi,Sb)(2)(Te,Se)(3)-based thin film thermoelectric generators,” Materials Letters, vol. 43, pp. 221–224, 2000.Google Scholar
4. Rowe, D. M., CRC handbook of thermoelectronics. New York: CRC Press, 1995.Google Scholar
5. Zeng, G., Bowers, J. E., Zhang, Y., and Shakouri, A., “SiGe/Si superlattice power generators,” the proceedings of 24th International Conference on Thermoelectrics, pp. 164–167, Clemson University, South Carolina, USA, 2005.Google Scholar
6. Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., “Thin-film thermoelectric devices with high room-temperature figures of merit,” Nature, vol. 413, pp. 597–602, 2001.Google Scholar
7. Humphrey, T. E. and Linke, H., “Reversible thermoelectric nanomaterials,” Physical Review Letters, vol. 94, pp. 096601–4, 2005.Google Scholar
8. Hicks, L. D. and Dresselhaus, M. S., “Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit,” Physical Review B, vol. 47, pp. 12727–12731, 1993.Google Scholar
9. Harman, T. C., Taylor, P. J., Walsh, M. P., and LaForge, B. E., “Quantum dot superlattice thermoelectric materials and devices,” Science, vol. 297, pp. 2229–2232, 2002.Google Scholar
10. Cahill, D. G., Ford, W. K., Goodson, K. E., Mahan, G. D., Majumdar, A., Maris, H. J., Merlin, R., and Phillpot, S. R., “Nanoscale thermal transport,” Journal of Applied Physics, vol. 93, pp. 793–818, 2003.Google Scholar
11. Koga, T., Sun, X., Cronin, S. B., and Dresselhaus, M. S., “Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices,” Applied Physics Letters, vol. 73, pp. 2950–2952, 1998.Google Scholar
12. Koga, T., Sun, X., Cronin, S. B., and Dresselhaus, M. S., “Carrier pocket engineering applied to “strained” Si/Ge superlattices to design useful thermoelectric materials,” Applied Physics Letters, vol. 75, pp. 2438–2440, 1999.Google Scholar
13. Shakouri, A. and Bowers, J. E., “Heterostructure integrated thermionic coolers,” Applied Physics Letters, vol. 71, pp. 1234–1236, 1997.Google Scholar
14. Kelly, M. J., Low-dimensional semiconductors: materials, physics, technology, devices. New York: Oxford University Press, 1995.Google Scholar
15. Markel, V. A. and George, T. F., Optics of Nanostructured Materials (Wiley Series in Lasers and Applications): Wiley-Interscience, 2000.Google Scholar
16. Tritt, T. M., “Recent trends in thermoelectric materials research III -Semiconductors and semimetals - Preface,” Recent Trends in Thermoelectric Materials Research Iii, vol. 71, pp. IX–XIV, 2001.Google Scholar
17. Hicks, L. D. and Dresselhaus, M. S., “Thermoelectric Figure of Merit of a One-Dimensional Conductor,” Physical Review B, vol. 47, pp. 16631–16634, 1993.Google Scholar
18. Huxtable, S. T., Abramson, A. R., Tien, C. L., Majumdar, A., LaBounty, C., Fan, X., Zeng, G. H., Bowers, J. E., Shakouri, A., and Croke, E. T., “Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices,” Applied Physics Letters, vol. 80, pp. 1737–1739, 2002.Google Scholar
19. Vashaee, D. and Shakouri, A., “Improved thermoelectric power factor in metalbased superlattices,” Physical Review Letters, vol. 92, pp. 106103/1, 2004.Google Scholar
20. Zide, J. M., Klenov, D. O., Stemmer, S., Gossard, A. C., Zeng, G., Bowers, J. E., Vashaee, D., and Shakouri, A., “Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles,” Applied Physics Letters, vol. 87, pp. 112102, 2005.Google Scholar
21. Zeng, G., Bowers, J. E., Zhang, Y., Shakouri, A., Zide, J. M., Gossard, A. C., Kim, W., and Majumdar, A., “ErAs/InGaAs superlattice Seebeck coefficient,” the proceedings of 24th International Conference on Thermoelectrics, pp. 485–488, Clemson University, South Carolina, USA, 2005.Google Scholar
22. Cahill, D. G., “Thermal-Conductivity Measurement from 30-K to 750-K - the 3-Omega Method,” Review of Scientific Instruments, vol. 61, pp. 802–808, 1990.Google Scholar