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3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure

Published online by Cambridge University Press:  01 February 2011

Ke Sun ,
Wen Feng ,
Jae Young Lee ,
Biyun Li  and
Ya-Hong Xie
Ke Sun
Affiliation:
[email protected], University of California, Los Angeles, Materials Science and Engineering, Los Angeles, California, United States
Wen Feng
Affiliation:
[email protected], University of California, Los Angeles, Materials Science and Engineering, Los Angeles, California, United States
Jae Young Lee
Affiliation:
[email protected], University of California, Los Angeles, Materials Science and Engineering, Los Angeles, United States
Biyun Li
Affiliation:
[email protected], University of California, Los Angeles, Materials Science and Engineering, Los Angeles, California, United States
Ya-Hong Xie
Affiliation:
[email protected], University of California, Los Angeles, Materials Science and Engineering, Los Angeles, California, United States
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Abstract

In this paper, we proposed a phase-change random access memory (PCRAM) cell with a self-insulated structure (SIS), which is expected to have better thermal efficiency than the conventional structures. 3-D finite element simulation is used to study the most power consuming RESET process for both SIS and conventional normal bottom contact (NBC) cells driven by a MOSFET. Instead of programming current, power consumption is investigated to give a more fundamental comparison between the two structures. Thermal proximity effect for both kinds of cells is directly analyzed by simulating a 3×3 device array. The potential slow-quenching issue of SIS is also discussed.

Keywords

memoryphase transformationsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A11-04
Copyright
Copyright © Materials Research Society 2009

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