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3.3 μm high brightness LEDs
Published online by Cambridge University Press: 01 February 2011
Abstract
Deep mesa etching and surface roughening have been implemented to InAs flip-chip LEDs emitting at 3300 nm (300 K). Near field and power measurements confirmed the output power enhancement of about 2 and brightness increase with and equivalent to a black body temperature of about 1250 K.
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- Copyright © Materials Research Society 2006
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