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3.2 AND 3.8 μm Emission and Lasing in AlGaAsSb/InGaAsSb Double Heterostructures with Asymmetric Band Offset Confinements

Published online by Cambridge University Press:  10 February 2011

M. P. Mikhailova ,
B. E. Zhurtanov ,
K. D. Moiseev ,
A. N. Imenkov ,
O. G. Ershov  and
Yu. P. Yakovlev
M. P. Mikhailova
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
B. E. Zhurtanov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
K. D. Moiseev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
A. N. Imenkov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
O. G. Ershov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
Yu. P. Yakovlev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021, St.Petersburg, Russia
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Abstract

We report the first observations of electroluminescence (EL) and lasing in laser structures with high Al-content (x=0.64, Eg=1.474 eV) cladding layers and a narrow-gap InGaAsSb active layer (Eg=0.326 eV at T=77K). The structures are LPE-grown lattice-matched to GaSb substrate. Band energy diagrams of the laser structures had strongly asymmetric band offsets. The heterojunction between high Al-content layer and InGaAsSb narrow-gap active layer has a type II broken-gap alignment at 300K. In this laser structure spontaneous emission was obtained at λ=3.8μm at T=77K and λ=4.25 μm at T=300K. Full width at half maximum (FWHM) of emission band was 34 meV. Emission intensity decreased by a factor of 30 from T=77K to 300K. Lasing with single dominant mode was achieved at λ=3.774 μm (T=80K) in pulsed mode. Threshold current as low as 60 mA and characteristic temperature T0=26K were obtained at T=80–120K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 101
Copyright
Copyright © Materials Research Society 1998

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