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1/f Noise in MoS2 Field Effect Transistors with Various Layer Thicknesses

Published online by Cambridge University Press:  12 June 2014

Suprem R. Das ,
Jiseok Kwon  and
David B. Janes
Suprem R. Das*
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, U.S.A
Jiseok Kwon
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, U.S.A
David B. Janes
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, U.S.A
*
*(contact author [email protected])
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Abstract

1/f noise in semiconductor devices and circuits provides important information regarding quality of the interface as well as the transport mechanism. In 1D and 2D channel materials, 1/f noise also provides information on stability under ambient conditions, including effects of contaminants adsorbed on the surface. In addition, noise levels are important in evaluating suitability of the device for analog and digital applications. In this work, we have fabricated back-gated field-effect transistors (FETs) using various thicknesses of mechanically exfoliated MoS2 flakes (bilayer and 15 layer flakes) and studied the 1/f noise under ambient conditions. The on-current of the devices scales with the number of layers. The Hooge parameters inferred from the measured noise amplitudes and calculated carrier densities are comparable to prior reports on devices such as CNTs and graphene FETs, even when measured under ambient conditions. The effect of channel and contacts on both the conductance and noise can be inferred from bias-dependent current and noise measurements.

Keywords

electrical propertiesnanoscaleRaman spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1701: Symposium NN – 2D Materials and Devices beyond Graphene , 2014 , mrss14-1701-nn05-06
Copyright
Copyright © Materials Research Society 2014 

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