Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T07:50:06.349Z Has data issue: false hasContentIssue false
  • English
  • Français

1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

Published online by Cambridge University Press:  30 August 2011

Guanxiong Liu ,
Sergey Rumyantsev ,
William Stillman ,
Michael Shur  and
Alexander A. Balandin
Guanxiong Liu
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
Sergey Rumyantsev
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York 12180 Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
William Stillman
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York 12180
Michael Shur
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York 12180
Alexander A. Balandin
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
Get access

Abstract

We carried out a systematic experimental study of the low-frequency noise characteristics in a large number of single and bilayer graphene transistors. The prime purpose was to determine the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the surface area of the graphene channel indicates that the dominant contributions to the 1/f electronic noise come from the graphene channel region itself. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise, which was attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors shows a non-monotonic dependence on the gate bias. This observation confirms that the 1/f noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

Keywords

nanoscalethin filmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1344: Symposium Y – Functional Two-Dimensional Layered Materials—From Graphene to Topological Insulators , 2011 , mrss11-1344-y09-06
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yang, X., Liu, G., Balandin, A.A. and Mohanram, K., Triple-mode single-transistor graphene amplifier and its applications, ACS Nano, 4, 5532 (2010).Google Scholar
2. Shao, Q., Liu, G., Teweldebrhan, D., Balandin, A. A., Rumyantsev, S., Shur, M. and Yan, D., Flicker noise in bilayer graphene transistors, Electron Device Lett., 30, 288 (2009).Google Scholar
3. Liu, G., Stillman, W., Rumyantsev, S., Shao, Q., Shur, M. and Balandin, A.A., Low-frequency electronic noise in the double-gate single-layer graphene transistors, Appl. Phys. Lett., 95, 033103 (2009).Google Scholar
4. Rumyantsev, S., Liu, G., Stillman, W., Shur, M. and Balandin, A.A., Electrical and noise characteristics of graphene field-effect transistors: ambient effects and noise sources, J. Physics: Cond. Matt., 22, 395302 (2010).Google Scholar
5. Ferrari, A. C., Meyer, J. C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K. S., Roth, S. and Geim, A. K., Phys. Rev. Lett. 97, 187401 (2006).Google Scholar
6. Calizo, I., Miao, F., Bao, W., Lau, C. N., and Balandin, A. A., Appl. Phys. Lett. 91, 071913 (2007).Google Scholar
7. McWhorter, A. L., Semiconductor Surface Physics (University of Pennsylvania Press, Philadelphia, 1957), pp 207.Google Scholar
8. Surya, C. and Hsiang, T. Y., Phys. Rev. B 33, 4898 (1986); Z. Celik-Butler and T.Y. Hsiang, Solid State Electron., 30, 419 (1987).Google Scholar
9. Christensson, S., Lundstrom, I. and Svensson, C., Solid State Electronics 11, 797 (1968).Google Scholar
10. Dmitriev, A.P., Borovitskaya, E., Levinshtein, M. E., Rumyantsev, S. L. and Shur, M. S., J. Appl. Phys. 90, 301 (2001).Google Scholar
11. Zhang, Y., Brar, V. W., Girit, C., Zettl, A. and Crommie, M. F., “Origin of spatial charge inhomogeneity in graphene”, Nat. Phys. 5, 722 (2009).Google Scholar