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1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

Published online by Cambridge University Press:  16 January 2012

Kensuke Akiyama ,
Hiroshi Funakubo  and
Masaru Itakura
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Masaru Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
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Abstract

A clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Keywords

luminescencesemiconductingcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-19
Copyright
Copyright © Materials Research Society 2012

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References

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