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1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

K.F. Huang ,
T.P. Hsieh ,
N.T. Yeh ,
W.J. Ho ,
J.I. Chyi  and
M.C. Wu
K.F. Huang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 350, R.O.C.
T.P. Hsieh
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 320, R.O.C
N.T. Yeh
Affiliation:
Telecommunication Laboratories, Chungha Telecom Co., Ltd., Yang-Mei, Taiwan 326, R.O.C. Phone: +886-3-4255139, Fax: +886-3-4254014, E-mail: [email protected]
W.J. Ho
Affiliation:
Telecommunication Laboratories, Chungha Telecom Co., Ltd., Yang-Mei, Taiwan 326, R.O.C. Phone: +886-3-4255139, Fax: +886-3-4254014, E-mail: [email protected]
J.I. Chyi
Affiliation:
Department of Electrical Engineering, National Central University Chung-Li, Taiwan 320, R.O.C
M.C. Wu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 350, R.O.C.
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Abstract

Systematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.51
Copyright
Copyright © Materials Research Society 2003

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