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˂100˃ Single Crystal Soi Films Obtained on 4. In Wafers Using Halogen Lamps

Published online by Cambridge University Press:  28 February 2011

M. Haond ,
D. Dutartre  and
D. Bensahel
M. Haond
Affiliation:
Centre National d'Etudes des Télécommunications, B. P. 98, 38243, Meylan–Cedex, France.
D. Dutartre
Affiliation:
Centre National d'Etudes des Télécommunications, B. P. 98, 38243, Meylan–Cedex, France.
D. Bensahel
Affiliation:
Centre National d'Etudes des Télécommunications, B. P. 98, 38243, Meylan–Cedex, France.
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Abstract

By using a halogen lamp recrystalization system, we show that a patterning of the underlying oxide of SOI structures allows a high yield of localization of the remaining defects generally encountered in zone melting recrystallization. The influence of the scan speed and grain orientation on the efficiency of the entrainment is investigated. Moreover, we show that a quasi-single crystal can be obtained if a combination of seeding and oxide patterning is used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 83
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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