Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:06:30.844Z Has data issue: false hasContentIssue false
  • English
  • Français

(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

Published online by Cambridge University Press:  10 February 2011

Zhenshan Zhang ,
Jeong Hwan Park  and
Susan Trolier-McKinstry
Zhenshan Zhang
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
Jeong Hwan Park
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
Susan Trolier-McKinstry
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
Get access

Abstract

In this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 73
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rajeev, K. P., Shivakumar, G. V. and Raychaudhuri, A. K., Solid State Commun. 79, 591 (1991).Google Scholar
2. Tseng, T., Yang, C., Liu, K. and Wu, J., Jpn. J. Appl. Phys. 35, 4743 (1996).Google Scholar
3. Shyu, M. J., Hong, T. J., Yang, T. J. and Wu, T. B., Jpn. J. Appl. Phys. 34, 3647 (1995).Google Scholar
4. Shyu, M. J., Hong, T. J. and Wu, T. B., Mater. Lett. 23, 222 (1995).Google Scholar
5. Yang, C. C., Chen, M. S., Hong, T. J., Wu, C. M. and Wu, T. B., Appl. Phys. Lett. 66, 2643 (1995).Google Scholar
6. Cho, C. R. and Payne, D. A., Appl. Phys. Lett. 71, 3013 (1997).Google Scholar
7. Wold, A., Post, B. and Banks, E., J. Amer. Chem. Soc. 70, 4911(1957).Google Scholar
8. Park, J. H., Kang, D. H. and Yoon, K. H., J. Am. Ceram. Soc., 82, 2116 (1999).Google Scholar
9. Shepard, J. F. Jr, Moses, P. J. and Trolier-McKinstry, S., Materials for Smart Systems II, 459, 225 (1996).Google Scholar
10. Shepard, J. F. Jr, Chu, F., Moses, P. J. and Trolier-McKinstry, S., MRS Proceeding 493, 415 (1997).Google Scholar
11. Park, S. E. and Shrout, T. R., U. S. Navy Workshop on Acoustic Transduction Materials and Devices (1999).Google Scholar
12. Park, J. H. and Trolier-McKinstry, S., submitted to the 1999 MRS Fall Meeting, Boston, MA.Google Scholar
13. Shepard, J. F. Jr, PhD Thesis, The Pennsylvania State University (1998).Google Scholar
14. Thorton, J. A. and Hoffman, D. W., Thin Solid Films, 171, 5 (1989).Google Scholar
15. Maria, J. P., PhD Thesis, The Pennsylvania State University (1998).Google Scholar