Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Shen, Junjie
Chen, Pengfei
Su, Lei
Shi, Tielin
Tang, Zirong
and
Liao, Guanglan
2016.
X-ray inspection of TSV defects with self-organizing map network and Otsu algorithm.
Microelectronics Reliability,
Vol. 67,
Issue. ,
p.
129.
Chen, Si
Qin, Fei
An, Tong
Chen, Pei
Xie, Bin
and
Shi, Xunqing
2016.
Protrusion of electroplated copper filled in through silicon vias during annealing process.
Microelectronics Reliability,
Vol. 63,
Issue. ,
p.
183.
Jae Shin
Thorum, Matthew
and
Richardson, Joe
2016.
Thermo-mechanical behavior of copper TSV and the effect of alternative metal liners.
p.
127.
Jiang, Tengfei
Spinella, Laura
Im, Jang-Hi
Huang, Rui
and
Ho, Paul S.
2016.
Processing Effect on Via Extrusion for TSVs in Three-Dimensional Interconnects: A Comparative Study.
IEEE Transactions on Device and Materials Reliability,
Vol. 16,
Issue. 4,
p.
465.
Chen, Xian
Dejoie, Catherine
Jiang, Tengfei
Ku, Ching-Shun
and
Tamura, Nobumichi
2016.
Quantitative microstructural imaging by scanning Laue x-ray micro- and nanodiffraction.
MRS Bulletin,
Vol. 41,
Issue. 6,
p.
445.
Bai, Baosheng
and
Liu, Qiang
2017.
Enhanced Cycle Performance of Silicon-Based Anode by Annealing Cu-Coated Carbon Cloth Current Collector for Flexible Lithium-Ion Battery.
Catalysis Letters,
Vol. 147,
Issue. 12,
p.
2962.
Chen, Si
An, Tong
Qin, Fei
and
Chen, Pei
2017.
Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading.
Journal of Electronic Materials,
Vol. 46,
Issue. 10,
p.
5916.
Wang, Hao
Kohyama, Masanori
Tanaka, Shingo
and
Shiihara, Yoshinori
2017.
Ab initiolocal-energy and local-stress analysis of tensile behaviours of tilt grain boundaries in Al and Cu.
Modelling and Simulation in Materials Science and Engineering,
Vol. 25,
Issue. 1,
p.
015005.
Liu, Jinxin
Huang, Zhiheng
Conway, Paul P.
Altmann, Frank
Petzold, Matthias
and
Naumann, Falk
2017.
On reproducing the copper extrusion of through-silicon-vias from the atomic scale.
p.
789.
Herms, Martin
Wagner, Matthias
De Messemaeker, Joke
and
De Wolf, Ingrid
2017.
A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon.
physica status solidi c,
Vol. 14,
Issue. 7,
Wu, Chenglin
Huang, Rui
and
Liechti, Kenneth M.
2017.
Characterizing Interfacial Sliding of Through-Silicon-Via by Nano-Indentation.
IEEE Transactions on Device and Materials Reliability,
Vol. 17,
Issue. 2,
p.
355.
Jalilvand, Golareh
Ahmed, Omar
Bosworth, Keenan
Fitzgerald, Cullen
Pei, Zhenlin
and
Jaing, Tengfei
2017.
Application of a Metallic Cap Layer to Control Cu TSV Extrusion.
p.
61.
Chen, Liangbiao
Jiang, Tengfei
and
Fan, Xuejun
2017.
3D Microelectronic Packaging.
Vol. 57,
Issue. ,
p.
293.
Wang, Junqiang
Wang, Qian
Wu, Zijian
Wang, Dejun
and
Cai, Jian
2017.
Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration.
IEEE Transactions on Components, Packaging and Manufacturing Technology,
Vol. 7,
Issue. 1,
p.
19.
Tu, K. N.
Liu, Yingxia
and
Li, Menglu
2017.
Effect of Joule heating and current crowding on electromigration in mobile technology.
Applied Physics Reviews,
Vol. 4,
Issue. 1,
Lee, Seung Yeon
Ju, Byeong-Kwon
and
Kim, Yong Tae
2018.
Performance of WCN diffusion barrier for Cu multilevel interconnects.
Japanese Journal of Applied Physics,
Vol. 57,
Issue. 4S,
p.
04FC01.
Liu, Jinxin
Huang, Zhiheng
Conway, Paul
and
Liu, Yang
2018.
Protrusion of Cu-TSV under different strain states.
p.
1.
Zhang, Yuanxiang
Wang, Jiankun
and
Yu, Sijia
2018.
Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration.
p.
883.
Lin, Chun-Cheng
Hu, Chi-Chang
Lu, Yi-Ting
and
Guo, Ren-Hau
2018.
Reconsider the depolarization behavior of copper electrodeposition in the presence of 3-mercapto-1-propanesulfonate.
Electrochemistry Communications,
Vol. 91,
Issue. ,
p.
75.
Ji, Linxian
Nie, Hexian
Su, Shidong
Chen, Yuanming
He, Wei
and
Ai, Kehua
2018.
Study of microvia filling process based on multi-physical coupling.
Transactions of the IMF,
Vol. 96,
Issue. 2,
p.
86.