Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Kim, Sun-Wook
Byeon, Dae-Seop
Jang, Hyunchul
Koo, Sang-Mo
Lee, Hoo-Jeong
and
Ko, Dae-Hong
2014.
Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction.
Applied Physics Letters,
Vol. 105,
Issue. 8,
Holt, Martin V.
Hruszkewycz, Stephan O.
Murray, Conal E.
Holt, Judson R.
Paskiewicz, Deborah M.
and
Fuoss, Paul H.
2014.
Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography.
Physical Review Letters,
Vol. 112,
Issue. 16,
Hueting, Raymond J. E.
Van Hemert, Tom
Kaleli, Buket
Wolters, Rob A. M.
and
Schmitz, Jurriaan
2015.
On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor (<inline-formula> <tex-math notation="LaTeX">${\pi }$ </tex-math></inline-formula>-FET).
IEEE Journal of the Electron Devices Society,
Vol. 3,
Issue. 3,
p.
149.
Wagner, Andrew J.
Hintsala, Eric D.
Kumar, Prashant
Gerberich, William W.
and
Mkhoyan, K. Andre
2015.
Mechanisms of plasticity in near-theoretical strength sub-100 nm Si nanocubes.
Acta Materialia,
Vol. 100,
Issue. ,
p.
256.
Maitrejean, S.
Loubet, N.
Augendre, E.
Morin, P.
Reboh, S.
Bernier, N.
Wacquez, R.
Lherron, B.
Bonnevialle, A.
Liu, Q.
Hartmann, J. M.
He, H.
Halimaoui, A.
Li, J.
Pilorget, S.
Kanyandekwe, J.
Grenouillet, L.
Chafik, F.
Morand, Y.
Royer, C. Le
Faynot, O.
Celik, M.
Doris, B.
and
De Salvo, B.
2015.
Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration.
ECS Journal of Solid State Science and Technology,
Vol. 4,
Issue. 9,
p.
P376.
Mayberry, C. S.
Huang, Danhong
Balakrishnan, G.
Kouhestani, C.
Islam, N.
Brueck, S. R. J.
and
Sharma, A. K.
2015.
Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime.
Journal of Applied Physics,
Vol. 118,
Issue. 13,
Moussavou, M.
Cavassilas, N.
Dib, E.
and
Bescond, M.
2015.
Influence of mechanical strain in Si and Ge p-type double gate MOSFETs.
p.
373.
Vitiello, E.
Virgilio, M.
Giorgioni, A.
Frigerio, J.
Gatti, E.
De Cesari, S.
Bonera, E.
Grilli, E.
Isella, G.
and
Pezzoli, F.
2015.
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates.
Physical Review B,
Vol. 92,
Issue. 20,
Vermeer, Michael J. DeVries
Zhang, Xiuwen
Trimarchi, Giancarlo
Donakowski, Martin D.
Chupas, Peter J.
Poeppelmeier, Kenneth R.
and
Zunger, Alex
2015.
Prediction and Synthesis of Strain Tolerant RbCuTe Crystals Based on Rotation of One-Dimensional Nano Ribbons within a Three-Dimensional Inorganic Network.
Journal of the American Chemical Society,
Vol. 137,
Issue. 35,
p.
11383.
Zhang, Hongti
Tersoff, Jerry
Xu, Shang
Chen, Huixin
Zhang, Qiaobao
Zhang, Kaili
Yang, Yong
Lee, Chun-Sing
Tu, King-Ning
Li, Ju
and
Lu, Yang
2016.
Approaching the ideal elastic strain limit in silicon nanowires.
Science Advances,
Vol. 2,
Issue. 8,
Zhang, Shuqing
Wang, Jinying
Li, Zhenzhu
Zhao, Ruiqi
Tong, Lianming
Liu, Zhongfan
Zhang, Jin
and
Liu, Zhirong
2016.
Raman Spectra and Corresponding Strain Effects in Graphyne and Graphdiyne.
The Journal of Physical Chemistry C,
Vol. 120,
Issue. 19,
p.
10605.
Guénolé, J.
Prakash, A.
and
Bitzek, E.
2016.
Influence of intrinsic strain on irradiation induced damage: the role of threshold displacement and surface binding energies.
Materials & Design,
Vol. 111,
Issue. ,
p.
405.
Avila, T.S.
Fichtner, P.F.P.
Hentz, A.
and
Grande, P.L.
2016.
On the use of MEIS cartography for the determination of Si 1–x Ge x thin-film strain.
Thin Solid Films,
Vol. 611,
Issue. ,
p.
101.
Kubo, Takayoshi
Häusermann, Roger
Tsurumi, Junto
Soeda, Junshi
Okada, Yugo
Yamashita, Yu
Akamatsu, Norihisa
Shishido, Atsushi
Mitsui, Chikahiko
Okamoto, Toshihiro
Yanagisawa, Susumu
Matsui, Hiroyuki
and
Takeya, Jun
2016.
Suppressing molecular vibrations in organic semiconductors by inducing strain.
Nature Communications,
Vol. 7,
Issue. 1,
Wang, Yiping
Seewald, Lucas
Sun, Yi‐Yang
Keblinski, Pawel
Sun, Xin
Zhang, Shengbai
Lu, Toh‐Ming
Johnson, Jared M.
Hwang, Jinwoo
and
Shi, Jian
2016.
Nonlinear Electron‐Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide.
Advanced Materials,
Vol. 28,
Issue. 40,
p.
8975.
Morin, Pierre
Maitrejean, Sylvain
Allibert, Frederic
Augendre, Emmanuel
Liu, Qing
Loubet, Nicolas
Grenouillet, Laurent
Pofelski, Alexandre
Chen, Kangguo
Khakifirooz, Ali
Wacquez, Romain
Reboh, Shay
Bonnevialle, Aurore
le Royer, Cyrille
Morand, Yves
Kanyandekwe, Joel
Chanemougamme, Daniel
Mignot, Yann
Escarabajal, Yann
Lherron, Benoit
Chafik, Fadoua
Pilorget, Sonia
Caubet, Pierre
Vinet, Maud
Clement, Laurent
Desalvo, Barbara
Doris, Bruce
and
Kleemeier, Walter
2016.
A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology.
Solid-State Electronics,
Vol. 117,
Issue. ,
p.
100.
Wen, Huashun
Borlaug, David
Wang, Hongxiang
Ji, Yuefeng
and
Jalali, Bahram
2016.
Engineering Strain in Silicon Using SIMOX 3-D Sculpting.
IEEE Photonics Journal,
Vol. 8,
Issue. 2,
p.
1.
Sharma, Arvind
Alam, Naushad
Dasgupta, Sudeb
and
Bulusu, Anand
2016.
Multifinger MOSFETs’ Optimization Considering Stress and INWE in Static CMOS Circuits.
IEEE Transactions on Electron Devices,
Vol. 63,
Issue. 6,
p.
2517.
Shao, Yang
Guo, Fangmin
Ren, Yang
Zhang, Junsong
Yang, Hong
Jiang, Daqiang
Hao, Shijie
and
Cui, Lishan
2017.
NiTi-Enabled Composite Design for Exceptional Performances.
Shape Memory and Superelasticity,
Vol. 3,
Issue. 1,
p.
67.
Sharma, Arvind
Alam, Naushad
and
Bulusu, Anand
2017.
Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit Design.
IEEE Transactions on Electron Devices,
Vol. 64,
Issue. 10,
p.
4002.