Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-31T06:58:42.477Z Has data issue: false hasContentIssue false
  • English
  • Français

Sputter Deposition Processes

Published online by Cambridge University Press:  29 November 2013

W.D. Westwood
Get access

Extract

Deposition of films by sputtering was observed first in 1852 by Grove. The technique was in general use through the 1920s for preparing reflective coatings and other thin film samples. Western Electric deposited gold on wax masters for phonograph recordings. The improvement in diffusion pump technology at that time caused thermal evaporation deposition to replace sputtering.

Not till the 1950s did sputter deposition reappear… Bell Laboratories developed tantalum hybrid circuit technology using sputter deposition. Besides depositing Ta, they created a new material, Ta2N, by reactively sputtering tantalum in gas mixtures of argon and N2. Since then, these two methods, sputtering of metals and alloys and reactive sputtering of compounds, have been investigated for many applications of thin film materials.

Although the general aspects of the methods have changed little in the past 30 years, the implementations have changed significantly, particularly since the introduction of magnetron systems in the 1970s. This review will concentrate mainly on these flexible, high rate magnetron deposition systems.

The term sputtering actually applies to the physical processes by which atoms are removed from a material. Momentum is transferred from an incident, energetic particle, usually in the form of an ion, to atoms of the target material. A large number of these atoms are displaced from their normal sites in the crystal lattice, producing a disordered structure that also contains some of the incident particles, which are implanted. Some of the target atoms are displaced from the surface; if they have enough energy, they escape from the target as sputtered atoms.

Type
Deposition Processes
Information
MRS Bulletin , Volume 13 , Issue 12 , December 1988 , pp. 46 - 51
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Grove, W.R., Philos. Trans. R. Soc. London, Ser. A 142 (1852) p. 87.Google Scholar
2.Tarng, M.L. and Wehner, G.K., J. Appl. Phys. 42 (1971) p. 2449.CrossRefGoogle Scholar
3.Thornton, J.A. and Penfold, A.S., Thin Film Processes, edited by Vossen, J.L. and Kern, W. (Academic Press, New York, 1978) Chapter 11–2.Google Scholar
4.Rossnagel, S.M. and Kaufman, H.R., J. Vac. Sci. Technol. A5 (1987) p. 2276.CrossRefGoogle Scholar
5.Rossnagel, S.M. and Kaufman, H.R., J. Vac. Sci. Technol. A6 (1988) p. 223.CrossRefGoogle Scholar
6.Maissel, L.I., Handbook of Thin Film Technology, edited by Maissel, L.I. and Glang, R. (McGraw-Hill, New York, 1970) Chapter 4.Google Scholar
7.Maniv, S. and Westwood, W.D., J. Vac. Sci. Technol. 17 (1980) p. 743.CrossRefGoogle Scholar
8.Este, G. and Westwood, W.D., J. Vac. Sci. Technol. A6 (1988) p. 1845.CrossRefGoogle Scholar
9.Nevis, B.E. and Tisone, T.C., J. Vac. Sci. Technol. 11 (1974) p. 1177.CrossRefGoogle Scholar
10.Thornton, J.A. and Lamb, J.L., Thin Solid Films 119 (1984) p. 87.CrossRefGoogle Scholar
11.Hoffman, D.W. and Thornton, J.A., Thin Solid Films 40 (1976) p. 355.CrossRefGoogle Scholar
12.Bruce, R., Eicher, S., and Westwood, W.D., J. Vac. Sci. Technol. A6 (1988) p. 1642.CrossRefGoogle Scholar
13.Ball, L.T., Falconer, I.S., McKenzie, D.R., and Smelt, J.M., J. Appl. Phys. 59 (1986) p. 720.CrossRefGoogle Scholar
14.Motohiro, T. and Taga, Y., Thin Solid Films 112 (1984) p. 161.CrossRefGoogle Scholar
15.Penfold, A.S., Ann. Tech. Conf. Proc. of the Society for Vacuum Coaters (1981) p. 9.Google Scholar
16.Vossen, J.L., J. Vac. Sci. Technol. 8 (1971) p. 512.CrossRefGoogle Scholar
17.Smith, J.F., Solid State Technol. 27 (1) (1984) p. 135.Google Scholar
18.Coburn, J.W., Taglauer, E., and Kay, E., Jpn. J. Appl. Phys. Suppl. 2–1 (1974) p. 501.CrossRefGoogle Scholar
19.Okamoto, A. and Serikawa, T., Thin Solid Films 137 (1986) p. 143.CrossRefGoogle Scholar
20.Sproul, W.D., Thin Solid Films 107 (1983) p. 141.CrossRefGoogle Scholar
21.Maniv, S., Miner, C.J., and West-wood, W.D., J. Vac. Sci. Technol. 18 (1981) p. 195.CrossRefGoogle Scholar
22.Este, G. and Westwood, W.D., J. Vac. Sci. Technol. A2 (1984) p. 1238.CrossRefGoogle Scholar
23.Fraser, D.B., VLSI Technology, edited by Sze, S.M. (McGraw-Hill, New York, 1983) Chapter 9.Google Scholar
24.Nowicki, R.S., VLSI Electronics: Microstructure Science 8, edited by Einspruch, N.G. and Brown, D.M. (Academic Press, New York, 1984) p. 27.Google Scholar
25.Ghandi, S.K., VLSI Fabrication Principles (Wiley-Interscience, New York, 1983) Chapter 8.Google Scholar
26.Wittmer, M., J. Vac. Sci. Technol. A3 (1985) p. 1797.CrossRefGoogle Scholar
27.Active and Passive Thin Film Devices edited by Coutts, T.J. (Academic Press, New York, 1978).Google Scholar
28.Movchan, B.A. and Demchishin, A.V., Phys. Met. Metallogr. 28 (1969) p. 83.Google Scholar
29.Thornton, J.A., J. Vac. Sci. Technol. 11 (1974) p. 666.CrossRefGoogle Scholar
30.Messier, R.A., J. Vac. Sci. & Technol. 2 (1984) p. 500.CrossRefGoogle Scholar
31.Hoffman, D.W. and Thornton, J.A., Thin Solid Films 45 (1977) p. 387.CrossRefGoogle Scholar
32.Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. A3 (1985) p. 576.CrossRefGoogle Scholar