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Single-Event Upsets in Microelectronics: Fundamental Physics and Issues

Published online by Cambridge University Press:  31 January 2011

Henry H.K. Tang  and
Kenneth P. Rodbell
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Abstract

We review the current understanding of single-event upsets (SEUs) in microelectronic devices. In recent years, SEUs have been recognized as one of the key reliability concerns for both current and future technologies. We identify the major sources of SEUs that impact many commercial products: (1) alpha particles in packaging materials, (2) background radiation due to cosmic rays, and (3) thermal neutrons in certain device materials. The origins of SEUs are examined from the standpoint of the fundamental atomic and nuclear interactions between the intruding particles (alpha particles, cosmic rays, and thermal neutrons) and semiconductor materials. We analyze field funneling, which is a key mechanism of charge collection in a device struck by an ionizing particle. Next, we formulate how SEU cross sections and SEU rates are calculated and discuss how these basic quantities are related to experiments. Finally, we summarize the major SEU issues regarding modeling, bulk complementary metal oxide semiconductor technologies, and research on future, exploratory technologies.

Keywords

microelectronicsradiation effectssemiconductorssingle-event upsets (SEUs)soft error rates
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 2: Single-Event Upsets in Microelectronics , February 2003 , pp. 111 - 116
Copyright
Copyright © Materials Research Society 2003

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References

1.May, T. and Woods, M.H., IEEE Trans. Electron Devices ED-26 (1979) p. 2.Google Scholar
2.Ziegler, J.F. and Lanford, W.A., Science 206 (1979) p. 776.CrossRefGoogle Scholar
3.IBM J. Res. Develop. 40 (1) (1996).Google Scholar
4.McNulty, P.J., Phys. Today 36 (1983) p. 9.Google Scholar
5.Baumann, R.C., Hossain, T.Z., Murata, S., and Kitagawa, H., in Proc. 33rd IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1995) p. 302.Google Scholar
6.Takai, H., ATLAS High-Energy Physics Collaboration, Brookhaven National Laboratory (private communication); H.Takai and H.H.K.Tang, Brookhaven National Laboratory-IBM Research Preprint (2002), “Single Event Effects in High Energy Physics Environment,” to appear in Nucl. Instrum. Methods.Google Scholar
7.Romero, J.L., STAR Relativistic Heavy-Ion Physics Collaboration, Brookhaven National Laboratory (private communication).Google Scholar
8.Gaisser, T.K., Cosmic Rays and Particle Physics (Cambridge University Press, Cambridge, 1990);Google Scholar
Flugge, S., ed., Handbuch der Physik, Vol. XLVI/1 (Springer, Berlin, 1961);Google Scholar
Handbuch der Physik, Vol. XLVI/2 (Springer, Berlin, 1967).Google Scholar
9.Friedlander, M.W., A Thin Cosmic Rain (Harvard University Press, Cambridge, MA, 2000).Google Scholar
10.Normand, E., IEEE Trans. Nucl. Sci. NS-48 (2001) p. 1996.CrossRefGoogle Scholar
11.Tang, H.H.K., IBM J. Res. Develop. 40 (1996) p. 91.Google Scholar
12.Segre, E., Rev. Mod. Phys. 27 (1955) p. 257.Google Scholar
13.Hsieh, C.M., Murley, P.C., and O'Brien, R.R., IEEE Trans. Electron Devices ED-30 (1983) p. 686.Google Scholar
14.Tang, H.H.K., Srinivasan, G.R., and Azziz, N., Phys. Rev. C 42 (1990) p. 1598.Google Scholar
15.Romero, J.L., Tang, H.H.K., Morrissey, D.J., Fauerbach, M., Pfaff, R., Powell, C.F., Sherrill, B.M., Brady, F.P., Cebra, D.A., Chance, J., Kintner, J.C., and Osborne, J.H., in Proc. 14th Int. Conf. on Application of Accelerators in Research and Industry, Vol. 392, edited by Duggan, J.L. and Morgan, I.L. (American Institute of Physics, College Park, MD, 1997) p. 655.Google Scholar
16.Tang, H.H.K. and Romero, J.L., in Proc. 14th Int. Conf. on Application of Accelerators in Research and Industry, Vol. 392, edited by Duggan, J.L. and Morgan, I.L. (American Institute of Physics, College Park, MD, 1997) p. 325;Google Scholar
Tang, H.H.K., in Proc. Int. Conf. on Nuclear Data for Science and Technology, Vol. 12, edited by Reffo, G., Ventura, A., and Grandi, C. (Italian Physical Society, Bologna, Italy, 1997) p. 1492.Google Scholar
17.Oldiges, P., Bernstein, K., Heidel, D., Klaasen, B., Cannon, E., Dennard, R., Tang, H., Ieong, M., and Wong, H.-S.P., in Proc. IEEE Symp. on VLSI Circuits (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2002) p. 46.Google Scholar
18.Srinivasan, G.R., Tang, H.K., and Murley, P.C., IEEE Trans. Nucl. Sci. NS-41 (1994) p. 2063;Google Scholar
Srinivasan, G.R., Murley, P.C., and Tang, H.K., in Proc. 32nd IEEE Int. Reliability Physics Symp. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1994) p. 12.Google Scholar
19.Rodbell, K., Zabel, T.H., and Tang, H., data taken from IBM Yorktown Tandem Accelerator, 2002 (unpublished).Google Scholar