Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-09T09:23:20.206Z Has data issue: false hasContentIssue false

Scanning Electron-Acoustic Microscopy: Do You Know Its Capabilities?

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

Characterization of materials usually requires microscopy techniques. Some of the most useful are based on a scanning microscope and involve scanning the sample surface with a focused beam (e.g., photons, electrons, ions, etc.). For example, photoacoustic microscopy uses a laser beam, acoustic microscopy uses an ultrasound beam, and scanning electron microscopy uses an electron beam. The interaction between the material and the beam produces a signal that can be used to generate a two-dimensional image.

In scanning photoacoustic microscopy (SPAM), an intensity-modulated light beam is used to produce oscillations in the surface temperature of the sample. These oscillations induce changes in the pressure of a fluid in the photoacoustic cell as a consequence of the periodic heat conduction from the surface to the cell fluid. Subsequently many material-characterization methods have employed the same philosophy as SPAM, using a modulated beam as an excitation probe. The breadth of such techniques is due to the large number of possible excitation sources and signal detectors that have been proposed to probe the specimen response. In particular, scanning electron-acoustic microscopy (SEAM), also referred to as thermal wave microscopy, is a technique based on the utilization of a scanning electron microscope developed in 1980 and applied in recent years to material characterization. It can be considered an additional mode of scanning electron microscopy (SEM), which uses the generation of acoustic waves in the sample. Most reviews have concentrated on the application of SEAM to metals and semiconductors. However many other possibilities exist.

Type
Ultrasonic Nondestructive Techniques for Materials Characterization
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Wong, Y.H., Thomas, R.L., and Hawkings, G.H., Appl. Phys. Lett. 32 (1978) p. 538.CrossRefGoogle Scholar
2.Quate, C.F., in Scanned Image Microscopy, edited by Ash, E.A. (Academic Press, London, 1980).Google Scholar
3.Murphy, J.C., MacLachlan, J.W., and Aamodt, L.C., IEEE Trans. Ultrasonics, Ferroelectrics Frequency Control, UFFC-33 (1986) p. 529.Google Scholar
4.Brandis, E. and Rosencwaig, A., Appl. Phys. Lett. 37 (1980) p. 98.CrossRefGoogle Scholar
5.Cargill, G.S. III, Nature 286 (1980) p. 691.CrossRefGoogle Scholar
6.White, R.M., J. Appl. Phys. 34 (1963) p. 3559.CrossRefGoogle Scholar
7.Opsal, J. and Rosencwaig, A., J. Appl. Phys. 53 (1982) p. 4241.CrossRefGoogle Scholar
8.Rosencwaig, A., Thin Solid Films 77 (L43) (1981).CrossRefGoogle Scholar
9.Cargill, G.S. III, Phys. Acous. XVIII (1988) p. 125.CrossRefGoogle Scholar
10.Balk, L.J., Adv. Electron. Electron Phys. 71 (1988) p. 1.CrossRefGoogle Scholar
11.Kultscher, N. and Balk, L.J., Scanning Electron Microscopy I (1986) p. 33.Google Scholar
12.Murphy, J.C., Aamodt, L.C., Satkiewicz, F.G., Givens, R.B., and Zarriello, P.R., John Hopkins APL Technical Dig. 7 (1986) p. 187.Google Scholar
13.Menzel, E. and Kubalek, E., Scanning Electron Microscopy III (1983) p. 1163.Google Scholar
14.Balk, L.J. and Domnik, M., Proc. SPIE 809 (1987) p. 151.CrossRefGoogle Scholar
15.Urchulutegui, M. and Piqueras, J., J. Appl. Phys. 69 (1991) p. 3589.CrossRefGoogle Scholar
16.Balk, L.J. and Kultscher, N., Inst. Phys. Conf. Ser. 67 (1983) p. 387.Google Scholar
17.Reiner, L., Scanning Electron Microscopy II (1979) p. 111.Google Scholar
18.Favro, L.D., Ultrasonic Symposium IEEE Vd2 (1984) p. 629.Google Scholar
19.Cargill, G.S. III, “Electron Acoustic Microscopy,” in Scanned Image Microscopy, edited by Ash, E.A. (Academic Press, London, 1980).Google Scholar
20.Holstein, W.L., J. Appl. Phys. 58 (1985) p. 2008.CrossRefGoogle Scholar
21.Balk, L.J., Davies, D.G., and Kultscher, N., IEEE Trans. Magn. (1984) p. 1466.Google Scholar
22.Balk, L.J. and Kultscher, N., J. Phys. Colloque C2 (1984) p. 873.Google Scholar
23.Urchulutegui, M., Piqueras, J., and Llopis, J., J. Appl. Phys. 65 (1989) p. 2677.CrossRefGoogle Scholar
24.Holstein, W.L., J. Electron Microscopy Tech. 5 (1987) p. 91.CrossRefGoogle Scholar
25.Rosencwaig, A., Science 218 (1982) p. 223.CrossRefGoogle Scholar
26.Mendez, B. and Piqueras, J., Inst. Phys. Conf. Ser. 100 (1989) p. 789.Google Scholar
27.Rosencwaig, A., Scanning Electron Microscopy IV (1984) p. 1611.Google Scholar
28.Urchulutegui, M., Piqueras, J., Salviati, G., and Lazzarini, L., J. Phys. D 6 (1) (1993).Google Scholar
29.Urchulutegui, M., Piqueras, J., and Aroca, C., Appl. Phys. Lett. 59 (1991) p. 994.CrossRefGoogle Scholar
30.Begnoche, B.C. and Holstein, W.L., Proc. EMSA Meeting 42 (1984) p. 390.Google Scholar