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A roadmap for future wide bandgap semiconductor power electronics

Published online by Cambridge University Press:  08 May 2015

Hajime Okumura
Hajime Okumura*
Affiliation:
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan; [email protected]
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Abstract

Energy savings and efficient usage of electric power are some of the most urgent issues for future sustainable development of human society. Power electronics is recognized as a key technology in this regard, and the innovation of power electronics is increasingly required. The important role of power electronics innovations in the future human society and a technology roadmap of power electronics utilizing wide bandgap semiconductors, which are typically represented by silicon carbide, are presented. This roadmap consists of several different domains in technology, from the materials side to the applications side. On this roadmap, three generations are defined as technological streams. Based on this roadmap, recent progress in silicon carbide power electronics is reviewed, and future prospects are discussed.

Keywords

Electronic materialsemiconductingdeviceselectrical properties
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 439 - 444
Copyright
Copyright © Materials Research Society 2015 

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References

Zacharias, P. Ed., Use of Electronic-Based Power Conversion for Distributed and Renewable Energy Sources (Institüt für Solare Energieversorgungstechnik, Verein an der Universität Kassel e.V., docupoint GmbH, Magdeburg, Germany, 2009).Google Scholar
Okumura, H., J. IEICE 95 (11), 1003 (2012) (in Japanese).Google Scholar
Okumura, H., J. IEICE 93 (11), 958 (2010) (in Japanese).Google Scholar
SIP, http://sip-cao.jp (in Japanese).Google Scholar
The White House, “President Obama Announces New Public-Private Manufacturing Innovation Institute,” available at http://www.whitehouse.gov/the-press-office/2014/01/15/president-obama-announces-new-public-private-manufacturing-innovation-in. News release, January 15, 2014.Google Scholar
State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering, “New York Power Electronics Manufacturing Consortium (NY-PEMC),” available at http://www.sunycnse.com/LeadingEdgeResearchandDevelopment/CNSEResearchCentersPrograms/NYPowerElectronicsManufacturingConsortium.aspx. News release, July 15, 2014.Google Scholar
SPEED, “Project Abstract,”http://www.speed-fp7.org.Google Scholar
Kimoto, T., Cooper, J.A., Fundamentals of Silicon Carbide Technology, 1st ed. (Wiley, Singapore, 2014).CrossRefGoogle Scholar
Tsuji, T., Tawara, T., Tanuma, R., Yonezawa, Y., Iwamuro, N., Kosaka, K., Yurimoto, H., Kobayashi, S., Matsuhata, H., Fukuda, K., Okumura, H., Arai, K., Mater. Sci. Forum 645–648, 913 (2010).CrossRefGoogle Scholar
Fujiwara, H., Katsuno, T., Ishikawa, T., Naruoka, H., Konishi, M., Endo, T., Watanabe, Y., Tsuruta, K., Onda, S., Adachi, A., Nagao, M., Hamada, K., Mater. Sci. Forum 717– 720, 911 (2012).Google Scholar
Senzaki, J., Shimozato, A., Kojima, K., Kato, T., Tanaka, Y., Fukuda, K., Okumura, H., Mater. Sci. Forum 717– 720, 703 (2012).CrossRefGoogle Scholar
Jacobson, H., Bergman, J.P., Hallin, C., Janzén, E., Tuomi, T., Lendenmann, H., J. Appl. Phys. 95, 1485 (2004).CrossRefGoogle Scholar
Palmour, J.W., Das, M., Ryu, S.-H., Hull, B., Zhang, Q., Callanan, R., Agarwal, A., in Abstr. 8th Eur. Conf. Silicon Carbide & Related Materials (Oslo, Norway, 2010), p. 17.Google Scholar
http://www.nssmc.com/news/old_nsc/detail/index.html?rec_id=4176.Google Scholar
Kondo, H., Takaba, H., Yamada, M., Urakami, Y., Okamoto, T., Kobayashi, M., Masuda, T., Gunjishima, I., Shigeto, K., Ooya, N., Sugiyama, N., Matsuse, A., Kozawa, T., Sato, T., Hirose, F., Yamauchi, S., Onda, S., Mater. Sci. Forum 778– 780, 17 (2014).CrossRefGoogle Scholar
Daikoku, H., Kado, M., Sakamoto, H., Suzuki, H., Bessho, T., Kusunoki, K., Yashiro, N., Okada, N., Moriguchi, K., Kamei, K., Mater. Sci. Forum 717– 720, 61 (2012).CrossRefGoogle Scholar
Ishida, Y., Takahashi, T., Kojima, K., Okumura, H., Arai, K., Yoshida, S., Mater. Sci. Forum 457–460, 213 (2004).CrossRefGoogle Scholar
Ito, M., Storasta, L., Tsuchida, H., Appl. Phys. Express. 1, 015001 (2008).CrossRefGoogle Scholar
La Via, F., Camarda, M., Canino, A., Severino, A., La Magna, A., Mauceri, M., Vecchio, C., Crippa, D., Mater. Sci. Forum 740–742, 167 (2013).CrossRefGoogle Scholar
Danno, K., Nakamura, D., Kimoto, T., Appl. Phys Lett. 90, 202109 (2007).CrossRefGoogle Scholar
Kimoto, T., Nanen, Y., Hayashi, T., Suda, J., Appl. Phys. Express. 3, 121201 (2010).CrossRefGoogle Scholar
Miyazawa, T., Ito, M., Tsuchida, H., Appl. Phys. Lett. 97, 202106 (2010).CrossRefGoogle Scholar
Harada, S., Kato, M., Suzuki, K., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K., IEDM Tech. Dig. 903 (2006).Google Scholar
Nakano, Y., Mukai, T., Nakamura, R., Nakamura, T., Kamisawa, A., Jpn. J. Appl. Phys. 48, 04C100 (2009).CrossRefGoogle Scholar
Tanaka, Y., Takatsuka, A., Yatsuo, T., Arai, K., Yano, K., Abstr. Inst. Electrical Engineers of Japan Meeting 4, 222 (2010) (in Japanese).Google Scholar
Tanaka, Y., Okamoto, M., Takatsuka, A., Arai, K., Yatsuo, T., Yano, K., Kasuga, M., IEEE Electron Device Lett. 27, 908 (2006).CrossRefGoogle Scholar
Nakamura, T., Nakano, Y., Aketa, M., Nakamura, R., Mitani, S., Sakairi, H., Yokotsuji, Y., IEDM Tech. Dig. 599 (2011).Google Scholar
Peters, D., Mitlehner, H., Elpelt, R., Schörner, R., Stephani, D., Proc. Eur. Conf. Power Electron. Appl. (Toulouse, France, 2003), p. 935.Google Scholar
Stum, Z., Bolotnikov, A., Losee, P., Matocha, K., Arthur, S., Nasadoski, J., Rao, R., Saadeh, O.S., Stevanovic, L., Myers-Ward, R.L., Deey, C.R. Jr., Gaskill, D.K., Mater. Sci. Forum 679–680, 637 (2011).CrossRefGoogle Scholar
Hamada, K., Miura, N., Hino, S., Kawakami, T., Imaizumi, M., Sumitani, H., Oomori, T., in Ext. Abstr. 2012 Int. Conf. Solid State Devices and Materials (Kyoto, Japan, 2012), p. 897.Google Scholar
Kono, H., Furukawa, M., Ariyoshi, K., Suzuki, T., Tanaka, Y., Shinohe, T., in Ext. Abs. 2012 Int. Conf. Solid State Devices and Materials (Kyoto, Japan, 2012), p. 468.Google Scholar
Harada, S., Kato, M., Shinozaki, M., Kobayashi, Y., Ariyoshi, K., Kojima, T., Sometani, M., Senzaki, J., Tanaka, Y., Okumura, H., in Abstr. 10th Euro. Conf. Silicon Carbide and Related Materials (Grenoble, France, 2014), p. TU-P-LN-05.Google Scholar
Kosugi, R., Sakuma, Y., Kojima, K., Itoh, S., Nagata, A., Yatsuo, T., Tanaka, Y., Okumura, H., in Proc. 26th Int. Symp. Power Semiconductor Devices and ICs (Waikoloa, HI, USA, 2014), p. 346.Google Scholar
Ryu, S.H., Cheng, L., Dhar, S., Capell, C., Jonas, C., Clayton, J., Donofrio, M., O’Loughlin, M., Burk, A., Agarwal, A., Palmour, J., Mater. Sci. Forum 717–720, 1135 (2012).CrossRefGoogle Scholar
Miyake, H., Okuda, T., Niwa, H., Kimoto, T., Suda, J., IEEE Electron Device Lett. 33, 1598 (2012).CrossRefGoogle Scholar
Okamoto, D., Tanaka, Y., Matsumoto, N., Mizukami, M., Ota, C., Takao, K., Fukuda, K., Okumura, H., Mater. Sci. Forum 740–742, 907 (2013).CrossRefGoogle Scholar
Yonezawa, Y., Mizushima, T., Takenaka, K., Fujisawa, H., Kato, T., Harada, S., Tanaka, Y., Okamoto, M., Sometani, M., Okamoto, D., Kumagai, N., Matsunaga, S., Deguchi, T., Arai, M., Hatakeyama, T., Makifuchi, Y., Araoka, T., Oose, N., Tsutsumi, T., Yoshikawa, M., Tatera, K., Harashima, M., Sano, Y., Morisaki, E., Takei, M., Miyajima, M., Kimura, H., Otsuki, A., Fukuda, K., Okumura, H., Kimoto, T., IEDM Tech. Dig. 661 (2013).Google Scholar
DENSO, http://www.denso.co.jp/ja/news/newsreleases/2012/120517–01.html (in Japanese).Google Scholar
Mitsubishi Electric, http://www.mitsubishielectric.co.jp/news/2012/0308.html (in Japanese).Google Scholar
Matsumoto, Y., Yamada, R., Kondo, Y., Ikeda, Y., Kimura, H., in Proc. 1st IEEE Conf. Power Eng. Renew. Energy (ICPERE2012) (Bali, Indonesia, 2012).Google Scholar
Simanjorang, R., Yamaguchi, H., Ohashi, H., Nakao, K., Ninomiya, T., Abe, S., Kaga, M., Fukui, A., in Proc. Appl. Power Electron. Conf. Expo. 2011 (Fort Worth, TX, 2011), p. 600.Google Scholar
Sato, S., Matsui, K., Zushi, Y., Murakami, Y., Tanimoto, S., Sato, H., Yamaguchi, H., Mater. Sci. Forum 679–680, 738 (2011).CrossRefGoogle Scholar
Mitsubishi Electric, http://www.mitsubishielectric.co.jp/news/2012/0927-b.html (in Japanese).Google Scholar
Takao, K., Tanaka, Y., Sung, K., Wada, K., Shinohe, T., Kanai, T., Ohashi, H., Proc. IEEE 2010 Energy Convers. Congr. Expo. (Atlanta, GA, 2010), p. 4558.Google Scholar