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Physical Properties of SiC

Published online by Cambridge University Press:  29 November 2013

W.J. Choyke  and
G. Pensl
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Extract

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

Type
Silicon Carbide Electronic Materials and Devices
Information
MRS Bulletin , Volume 22 , Issue 3 , March 1997 , pp. 25 - 29
Copyright
Copyright © Materials Research Society 1997

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References

1.Frazier, B.W., J. Franklin Inst. (1893) p. 287.Google Scholar
2.Lambrecht, W.R.L., in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by Carter, C.H. Jr., Gildenblat, G., Nakamura, S., and Nemanich, R.J. (Mater. Res. Soc. Symp. Proc. 339, Pittsburgh, 1994) p. 565.Google Scholar
3.Lambrecht, W.R.L. and Segall, B., Phys. Rev. B 52 (1995) p. R2249.CrossRefGoogle Scholar
4.Käckel, P., Wenzien, B., and Bechstedt, F., Phys. Rev. 50 (1994) p. 10761.CrossRefGoogle Scholar
5.Tsvetkov, V.F., Allen, S.T., Kong, H.S., and Carter, C.H. Jr., in Proc. 6th Int. Conf. on Silicon Carbide and Related Materials 1995, edited by Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H. (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 17.Google Scholar
6.Patrick, L., Phys. Rev. B 5 (1972) p. 2198.CrossRefGoogle Scholar
7.Schöner, A., Nordell, N., Rottner, K., Helbig, R., and Pensl, G., in Proc. 6th Int. Conf. on Silicon Carbide and Related Materials 1995, edited by Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H. (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 493.Google Scholar
8.Pensl, G. and Choyke, W.J., Physica B 185 (1993) p. 264.CrossRefGoogle Scholar
9.Schadt, M., Pensl, G., Devaty, R.P., Choyke, W.J., Stein, R., and Stephani, D., Appl. Phys. Lett. 65 (1994) p. 3120.CrossRefGoogle Scholar
10.Schaffer, W.J., Negley, G.M., Irvine, K.G., and Palmour, J.W., in Advanced Metallization for Devices and Circuits-Science, Technology, and Manufacturability, edited by Murarka, S.P., Katz, A., Tu, K.N., and Maex, K. (Mater. Res. Soc. Symp. Proc. 337, Pittsburgh, 1994) p. 595.Google Scholar
11.Troffer, T., Peppermüller, C., Pensl, G., Rottner, K., and Schöner, A., J. Appl. Phys. 80 (1996) p. 3739.CrossRefGoogle Scholar
12.Reinke, J.Greulich-Weber, S., Spaeth, J-M., Kalabukhova, E.N., Lukin, S.N., and Mokhov, E.N., in Proc. 5th Int. Conf. on Silicon Carbide and Related Materials, edited by Spencer, M.G., Devaty, R.P., Edmond, J.A., Khan, M.A., Kaplan, R., and Rahman, M. (Institute of Physics Conference Series No. 137, Bristol, 1994) p. 211.Google Scholar
13.Larkin, D.J., Sridhara, S.G., Devaty, R.P., and Choyke, W.J., J. Electron. Mater. 24 (4) (1995) p. 289.CrossRefGoogle Scholar