The development of microelectronic miniaturization has taken an almost revolutionary course. For more than 20 years, important performance features have doubled every one to one and a half years on a per-chip level and, despite some recent economic worries, most people believe that we will see equally rapid progress for at least another 10 years. CMOS technology is making the fastest advances among the different microelectronic technologies and is pushing forward most powerfully. The acronym CMOS stands for Complementary Metal Oxide Semiconductor (chapter 8 in Reference 1) and means that two complementary types of transistor devices carry a current for complementary bias conditions. A device of this kind often used for switching purposes is drawn schematically in Figure 1. It uses a control electrode, called the gate, to switch a current flow from the terminal source to the terminal drain. The channel can be made conducting depending on the potential applied to the gate which is separated from the semiconductor by an insulating dielectric layer, namely amorphous SiO2. Control is via a field effect; for example, in one of the two complementary types of devices, a positive gate voltage can draw negatively charged electrons toward the interface, which causes conduction from the source to the drain through the otherwise blocked source and drain contacts.