Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-16T02:40:29.291Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase-change memory cycling endurance

Published online by Cambridge University Press:  05 September 2019

SangBum Kim ,
Geoffrey W. Burr ,
Wanki Kim  and
Sung-Wook Nam
SangBum Kim
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Republic of Korea, [email protected]
Geoffrey W. Burr
Affiliation:
IBM Research–Almaden, USA, [email protected]
Wanki Kim
Affiliation:
IBM T.J. Watson Research Center, USA, [email protected]
Sung-Wook Nam
Affiliation:
School of Medicine, Kyungpook National University, Republic of Korea, [email protected]
Get access

Abstract

The cycling endurance of phase-change memory is one of the last hurdles to overcome to enable its adoption in the larger market for persistent memory products. Phase-change memory cycling endurance failures, whether they are stuck-SET (caused by elemental segregation) or stuck-RESET (caused by void formation), are caused by atomic migration. Various driving forces responsible for the atomic migration have been identified, such as hole-wind force, electrostatic force, and crystallization-induced segregation. We introduce several strategies to improve cycling endurance based on an understanding of driving forces and interactions among them. Utilizing some of these endurance-improving techniques, record-high phase-change memory cycling endurance at around 1012 cycles has been recently reported using a confined phase-change memory cell with a metallic liner.

Keywords

memoryelectromigrationthermal stresses
Type
Phase-Change Materials in Electronics and Photonics
Information
MRS Bulletin , Volume 44 , Issue 9: Phase-Change Materials in Electronics and Photonics , September 2019 , pp. 710 - 714
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Pirovano, A., Redaelli, A., Pellizzer, F., Ottogalli, F., Tosi, M., Ielmini, D., Lacaita, A.L., Bez, R., IEEE Trans. Device Mater. Reliab. 4, 422 (2004).CrossRefGoogle Scholar
Yoon, S.-M., Choi, K.-J., Lee, N.-Y., Lee, S.-Y., Park, Y.-S., Yu, B.-G., Jpn. J. Appl. Phys. 46, L99 (2007).CrossRefGoogle Scholar
Lai, S., 2003 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2003), pp. 10.1.1–10.1.4.Google Scholar
Cappelletti, P., 2015 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2015), pp. 10.1.1–10.1.4.CrossRefGoogle Scholar
Webb, M., Flash Memory Summit (Santa Clara, CA, 2018).Google Scholar
Wong, H.-S.P., Raoux, S., Kim, S., Liang, J., Reifenberg, J.P., Rajendran, B., Asheghi, M., Goodson, K.E., Proc. IEEE 98, 2201 (2010).CrossRefGoogle Scholar
Chen, C., Schrott, A., Lee, M.H., Raoux, S., Shih, Y.H., Breitwisch, M.J., Baumann, F.H., Lai, E.-K., Shaw, T.M., Flaitz, P., Cheek, R., Joseph, E.A., Chen, S.H., Rajendran, B., Lung, H.-L., Lam, C.H., 2009 IEEE International Memory Workshop (IEEE, Monterey, CA, 2009), doi:10.1109/IMW.2009.5090589.Google Scholar
Sarkar, J., Gleixner, B., Appl. Phys. Lett. 91, 233506 (2007).CrossRefGoogle Scholar
Rajendran, B., Lee, M.-H., Breitwisch, M., Burr, G.W., Shih, Y.-H., Cheek, R., Schrott, A., Chen, C.-F., Lamorey, M., Joseph, E., Zhu, Y., Dasaka, R., Flaitz, P.L., Baumann, F.H., Lung, H.-L., Lam, C., 2008 Symposium on VLSI Technology (IEEE, Honolulu, 2008), pp. 96–97.CrossRefGoogle Scholar
Lee, S., Jeong, J.-H., Lee, T.S., Kim, W.M., Cheong, B.-K., 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (IEEE, Opio, France, 2008), pp. 46–48.CrossRefGoogle Scholar
Lee, M.H., Cheek, R., Chen, C.F., Zhu, Y., Bruley, J., Baumann, F.H., Shih, Y.H., Lai, E.K., Breitwisch, M., Schrott, A., Raoux, S., Joseph, E.A., Cheng, H.-Y., Wu, J.Y., Lung, H.L., Lam, C., 2010 International Electron Devices Meeting (IEEE, San Francisco, 2010), pp. 28.6.1–28.6.4.Google Scholar
Khwa, W.S., Wu, J.Y., Su, T.H., Li, H.P., BrightSky, M., Wang, T.Y., Hsu, T.H., Du, P.Y., Kim, S., Chien, W.C., Cheng, H.Y., Cheek, R., Lai, E.K., Zhu, Y., Lee, M.H., Chang, M.F., Lung, H.L., Lam, C., 2014 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, 2014), pp. 29.8.1–29.8.4.CrossRefGoogle Scholar
Bae, J.S., Hwang, K.M., Park, K.H., Jeon, S.B., Choi, J., Ahn, J.H., Kim, S.S., Ahn, D.-H., Jeong, H.S., Nam, S.W., Jeong, G.T., Cho, H.K., Jang, D.H., Park, C.-G., 2012 IEEE International Reliability Physics Symposium (IRPS) (IEEE, Anaheim, CA, 2012), pp. EM.7.1–EM.7.4.Google Scholar
Nam, S.-W., Kim, C., Kwon, M.-H., Lee, H.-S., Wi, J.-S., Lee, D., Lee, T.-Y., Khang, Y., Kim, K.-B., Appl. Phys. Lett. 92, 111913 (2008).CrossRefGoogle Scholar
Kim, C., Kang, D., Lee, T.-Y., Kim, K.H.P., Kang, Y.-S., Lee, J., Nam, S.-W., Kim, K.-B., Khang, Y., Appl. Phys. Lett. 94, 193504 (2009).Google Scholar
Yang, T.-Y., Park, I.-M., Kim, B.-J., Joo, Y.-C., Appl. Phys. Lett. 95, 032104 (2009).CrossRefGoogle Scholar
Park, Y.-J., Yang, T.-Y., Cho, J.-Y., Lee, S.-Y., Joo, Y.-C., Appl. Phys. Lett. 103, 073503 (2013).CrossRefGoogle Scholar
Park, Y.-J., Cho, J.-Y., Jeong, M.-W., Na, S., Joo, Y.-C., Sci. Rep. 6, 21466 (2016).CrossRefGoogle Scholar
Nam, S.-W., Chung, H.-S., Lo, Y.C., Qi, L., Li, J., Lu, Y., Johnson, A.T.C., Jung, Y., Nukala, P., Agarwal, R., Science 336, 1561 (2012).CrossRefGoogle Scholar
Do, K., Lee, D., Ko, D.-H., Sohn, H., Cho, M.-H., Electrochem. Solid-State Lett. 13, H284 (2010).CrossRefGoogle Scholar
Debunne, A., Virwani, K., Padilla, A., Burr, G.W., Kellock, A.J., Deline, V.R., Shelby, R.M., Jackson, B., J. Electrochem. Soc. 158, H965 (2011).CrossRefGoogle Scholar
Yeoh, P., Ma, Y., Cullen, D.A., Bain, J.A., Skowronski, M., Appl. Phys. Lett. 114, 163507 (2019).CrossRefGoogle Scholar
Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., Takao, M., J. Appl. Phys. 69, 2849 (1991).CrossRefGoogle Scholar
Coombs, J.H., Jongenelis, A.P.J.M., van Es-Spiekman, W., Jacobs, B.A.J., J. Appl. Phys. 78, 4918 (1995).CrossRefGoogle Scholar
Raoux, S., Cheng, H.-Y., Caldwell, M.A., Wong, H.-S.P., Appl. Phys. Lett. 95, 071910 (2009).CrossRefGoogle Scholar
Park, I.-M., Jung, J.-K., Ryu, S.-O., Choi, K.-J., Yu, B.-G., Park, Y.-B., Han, S.M., Joo, Y.-C., Thin Solid Films 517, 848 (2008).CrossRefGoogle Scholar
Crespi, L., Lacaita, A., Boniardi, M., Varesi, E., Ghetti, A., Redaelli, A., D’Arrigo, G., 2015 IEEE International Memory Workshop (IMW) (IEEE, Monterey, CA, 2015), doi:10.1109/IMW.2015.7150296.Google Scholar
Padilla, A., Burr, G.W., Virwani, K., Debunne, A., Rettner, C.T., Topuria, T., Rice, P.M., Jackson, B., Dupouy, D., Kellock, A.J., Shelby, R.M., Gopalakrishnan, K., Shenoy, R.S., Kurdi, B.N., 2010 International Electron Devices Meeting (IEDM) (IEEE, San Francisco, 2010), pp. 29.4.1–29.4.4.Google Scholar
Padilla, A., Burr, G.W., Rettner, C.T., Topuria, T., Rice, P.M., Jackson, B., Virwani, K., Kellock, A.J., Dupouy, D., Debunne, A., Shelby, R.M., Gopalakrishnan, K., Shenoy, R.S., Kurdi, B.N., J. Appl. Phys. 110, 054501 (2011).CrossRefGoogle Scholar
Goux, L., Tio Castro, D., Hurkx, G.A.M., Lisoni, J.G., Delhougne, R., Gravesteijn, D.J., Attenborough, K., Wouters, D.J., IEEE Trans. Electron Devices 56, 354 (2009).CrossRefGoogle Scholar
Calderoni, A., Ferro, M., Varesi, E., Fantini, P., Rizzi, M., Ielmini, D., 2012 4th IEEE International Memory Workshop (IEEE, Milan, Italy, 2012), doi:10.1109/IMW.2012.6213675.Google Scholar
Du, P.-Y., Wu, J.-Y., Hsu, T.-H., Lee, M.-H., Wang, T.-Y., Cheng, H.-Y., Lai, E.-K., Lai, S.-C., Lung, H.-L., Kim, S., Breitwisch, M., Zhu, Y., Mittal, S., Cheek, R., Raoux, S., Joseph, E.A., Schrott, A., Li, J., Lam, C., 2012 IEEE International Reliability Physics Symposium (IRPS) (IEEE, Anaheim, CA, 2012), pp. 6C.2.1–6C.2.6.Google Scholar
Novielli, G., Ghetti, A., Varesi, E., Mauri, A., Sacco, R., 2013 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2013), pp. 22.3.1–22.3.4.CrossRefGoogle Scholar
Servalli, G., 2009 IEEE International Electron Devices Meeting (IEDM) (IEEE, Baltimore, 2009), pp. 5.7.1–5.7.4.Google Scholar
Castro, D.T., Goux, L., Hurkx, G.A.M., Attenborough, K., Delhougne, R., Lisoni, J., Jedema, F.J., M.A.A. in `T Zandt, Wolters, R.A.M., Gravesteijn, D.J., Verheijen, M.A., Kaiser, M., Weemaes, R.G.R., Wouters, D.J., 2007 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2007), pp. 315–318.CrossRefGoogle Scholar
Faraclas, A., Bakan, G., Adnane, L., Dirisaglik, F., Williams, N.E., Gokirmak, A., Silva, H., IEEE Trans. Electron Devices 61, 372 (2014).CrossRefGoogle Scholar
Salinga, M., Kersting, B., Ronneberger, I., Jonnalagadda, V.P., Vu, X.T., Le Gallo, M., Giannopoulos, I., Cojocaru-Mirédin, O., Mazzarello, R., Sebastian, A., Nat. Mater. 17, 681 (2018).CrossRefGoogle Scholar
Zhang, W., Ma, E., Nat. Mater. 17, 654 (2018).CrossRefGoogle Scholar
Kim, W., BrightSky, M., Masuda, T., Sosa, N., Kim, S., Bruce, R., Carta, F., Fraczak, G., Cheng, H.Y., Ray, A., Zhu, Y., Lung, H.-L., Suu, K., Lam, C., 2016 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, 2016), pp. 4.2.1–4.2.4.CrossRefGoogle Scholar
Kim, W., Kim, S., Bruce, R., Carta, F., Fraczak, G., Ray, A., Lam, C., BrightSky, M., Zhu, Y., Masuda, T., Suu, K., Xie, Y., Kim, Y., Cha, J.J., 2018 IEEE International Reliability Physics Symposium (IRPS) (IEEE, Burlingame, CA, 2018), pp. 6D.5-1–6D.5-5.CrossRefGoogle Scholar
Cheng, H.-Y., BrightSky, M., Raoux, S., Chen, C.F., Du, P.Y., Wu, J.Y., Lin, Y.Y., Hsu, T.H., Zhu, Y., Kim, S., Lin, C.M., Ray, A., Lung, H.-L., Lam, C., 2013 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2013), pp. 30.6.1–30.6.4.CrossRefGoogle Scholar
BrightSky, M., Sosa, N., Masuda, T., Kim, W., Kim, S., Ray, A., Bruce, R., Gonsalves, J., Zhu, Y., Suu, K., Lam, C., 2015 IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, 2015), pp. 3.6.1–3.6.4.Google Scholar
Xie, Y., Kim, W., Kim, Y., Kim, S., Gonsalves, J., BrightSky, M., Lam, C., Zhu, Y., Cha, J.J., Adv. Mater. 30, 1705587 (2018).CrossRefGoogle Scholar
Kim, S., Du, P.Y., Li, J., Breitwisch, M., Zhu, Y., Mittal, S., Cheek, R., Hsu, T.-H., Lee, M.H., Schrott, A., Raoux, S., Cheng, H.Y., Lai, S.-C., Wu, J.Y., Wang, T.Y., Joseph, E.A., Lai, E.K., Ray, A., Lung, H.-L., Lam, C., Proc. 2012 Int. Symp. VLSI Technol. Syst. Appl. (IEEE, Hsinchu, Taiwan, 2012), doi:10.1109/VLSI-TSA.2012.6210122.Google Scholar
Rao, F., Ding, K., Zhou, Y., Zheng, Y., Xia, M., Lv, S., Song, Z., Feng, S., Ronneberger, I., Mazzarello, R., Zhang, W., Ma, E., Science 358, 1423 (2017).CrossRefGoogle Scholar