Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-26T02:30:30.289Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

Published online by Cambridge University Press:  29 November 2013

Nigel P. Hacker
Get access

Extract

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.

While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

Type
Low-Dielectric-Constant Materials
Information
MRS Bulletin , Volume 22 , Issue 10: Low-Dielectric-Constant Materials , October 1997 , pp. 33 - 38
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stoakley, D., Clair, A. St., and Croal, C., Polymer Preprints 34 (1) (1993) p. 381.Google Scholar
2. Feiring, A., Auman, B., and Wonchoba, E., Polymer Preprints p. 393.Google Scholar
3. See article in this issue by R. Miller.Google Scholar
4. Auman, B., in Low-Dielectric Constant Materials—Synthesis and Applications in Micro-electronics, edited by Lu, T-M., Murarka, S.P., Kuan, T-S., and Ting, C.H. (Mater. Res. Soc. Symp. Proc. 381, Pittsburgh, 1995) p. 19.Google Scholar
5. McKerrow, A., Leu, J., Ho, H-M., Auman, B., and Ho, P., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, edited by Ellwanger, R. and Wang, S-Q. (Materials Research Society) p. 37.Google Scholar
6. McKerrow, A. and Ho, P., in Low Dielectric Constant Materials and Interconnects Workshop Proc. (SEMATECH 1996) p. 199.Google Scholar
7. Martin, S., Mills, M., Townsend, P., and Castillo, D., in Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, edited by Ellwanger, R. and Wang, S-Q. (Materials Research Society) p. 23.Google Scholar
8. Case, C. and Kornblit, A., in Low Dielectric Constant Materials and Interconnects Workshop Proc. (SEMATECH 1996) p. 387.Google Scholar
9. Townsend, P., Shaffer, E., Mills, M., Blackson, J., and Radler, M., Low Dielectric Constant Materials and Interconnects Workshop Proc. p. 427.Google Scholar
10. Townsend, P., Godschalx, J., Martin, S., Castillo, D., Marshall, J., and Froelkher, S., presented at Symposium N, Materials Research Society Meeting, San Francisco, April 2, 1997.Google Scholar
11. Shick, R., Goodall, B., McIntosh, L., Jayaraman, S., Kohl, P., Bidstrup-Allen, S., and Grove, N., in Low Dielectric Constant Materials and Interconnects Workshop Proc. (SEMATEC 1996) p. 114.Google Scholar
12. Bidstrup-Allen, S., Kohl, P., Grove, N., Shick, K., Goodall, B., and Jayaraman, S., presented at Symposium N, Materials Research Society Meeting, San Francisco, April 2, 1997.Google Scholar
13. Lau, K., Brouk, E., Chen, T., Korolev, B., Schilling, P., and Thompson, H., in Proc. 14th Int. VLSI Multilevel Interconnection Conf. (1997) p. 577.Google Scholar
14. Vrtis, R., Heap, K., Burgoyne, W., and Robeson, L., in Low Dielectric Constant Materials and Interconnects Workshop Proc. (SEMATECH 1996) p. 221.Google Scholar
15. Vrtis, R., Heap, K., Burgoyne, W., and Robeson, L., in Proc. 14th Int. VLSI Multilevel Interconnection Conf. (1997) p. 620.Google Scholar
16. Pellerin, J. (private communication).Google Scholar
17. Maruyama, H., Ohashi, N., Yoshida, M., Taguma, Y., Konishi, N., Kikishima, K., and Owada, N., in Proc. 14th Int. VLSI Multilevel Interconnection Conf. (1997) p. 629.Google Scholar
18. Fukuyama, S-i., Nakata, Y., and Kobayashi, M., in Proc. 1st Int. Dielectrics for VLSI/ULSI Multilevel Interconnection Conf. (1995) p. 80.Google Scholar
19. Leung, R., Nakano, T., Case, S., Sung, B., Yang, J., and Choi, D., in Proc. 3rd Int. Dielectrics for VLSI/ULSI Multilevel Interconnection Conf. (1997) p. 49.Google Scholar
20. Frye, C. and Collins, W., J. Am. Chem. Soc. 92 (1970) p. 5586.Google Scholar
21. Jeng, P., Taylor, K., Seha, T., Chang, M-C., Fattaruso, J., and Havemann, R., in Proc. 1995 Symposium on VLSI Technology Digest of Technical Papers (1995) p. 61.Google Scholar
22. Tobben, D., Weigand, P., and Shapiro, M., presented at Symposium H, Boston, Materials Research Society Meeting, December 3, 1996.Google Scholar
23. Nakano, T., Tokunaga, K., and Ohta, T., J. Electrochem Soc. 142 (1995) p. 1303.Google Scholar
24. Bothra, S., Harvey, I., and Weling, M., in Proc. 14th Int. VLSI Multilevel Interconnection Conf. (1997) p. 134.Google Scholar
25. Hacker, N., Drage, J., Katsanes, R., and Sebahar, P., in Proc. 12th. Int. VLSI Multilevel Interconnection Conf. (1995) p. 138.Google Scholar
26. Waeterloss, J., Meynen, H., Coenegrachts, B., Grillaert, J., and Van den hove, L., in Proc. 2nd Int. Dielectrics for VLSI/ULSI Multilevel Interconnection Conf. (1996) p. 52.Google Scholar