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Material Properties of III–V Semiconductors for Lasers and Detectors

Published online by Cambridge University Press:  31 January 2011

Charles W. Tu  and
Paul K.L.Yu
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Abstract

We describe how the material properties of III–V semiconductors, including bandgap, band structure, band offset, refractive index, absorption, and ionization coefficient, are exploited for lasers and photodetectors for fiber-optic communications. The material systems discussed for 1.3 μm and 1.55 μm light emission include the more traditional GaInAsP and AlGaInAs on InP, the more recently investigated GaInAs quantum dots and low-bandgap GaInNAs on GaAs as well as GaAsSb/GaAs Type II structures, and the potentially viable GaN/AlGaN from intersubband transitions (i.e., between quantized conduction-band energy levels). As an example of photodetector applications, GaInAsP/InP and wafer-fused GaInAs/Si are discussed in terms of gain and noise factor for use in avalanche photodiodes with separate absorption and multiplication regions.

Keywords

chemical vapor depositioncompound semiconductorslasersmolecular-beam epitaxy (MBE)optical communicationsoptoelectronic materialsphotodetectorsphotonic materialswafer fusion
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 5: Photonic Materials for Optical Communications , May 2003 , pp. 345 - 349
Copyright
Copyright © Materials Research Society 2003

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