Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Hess, L.D.
Eckhardt, G.
Kokorowski, S.A.
Olson, G.L.
Gupta, A.
Chi, Y.M.
Valdez, J.B.
Ito, C.R.
Nakaji, E.M.
and
Lou, L.F.
1982.
Applications of Laser Annealing in IC Fabrication.
MRS Proceedings,
Vol. 13,
Issue. ,
Lowndes, Douglas H.
Jellison, G. E.
and
Wood, R. F.
1982.
Time-resolved optical studies of silicon during nanosecond pulsed-laser irradiation.
Physical Review B,
Vol. 26,
Issue. 12,
p.
6747.
Vasconcellos, Áurea R.
and
Luzzi, Roberto
1984.
Disorder-order structural transition in highly excited semiconductor plasma.
Physical Review B,
Vol. 29,
Issue. 2,
p.
1052.
BROWN, W.L.
1984.
Ion Implantation and Beam Processing.
p.
99.
d'Heurle, F. M.
Hodgson, R. T.
and
Ting, C. Y.
1985.
Silicides and Rapid Thermal Annealing.
MRS Proceedings,
Vol. 52,
Issue. ,
Malvezzi, A. M.
1988.
Laser Science and Technology.
p.
155.
Givargizov, E. I.
1991.
Oriented Crystallization on Amorphous Substrates.
p.
221.
Sameshima, T.
2002.
Progress in laser annealing for low-temperature semiconductor processing and its application to advanced electronics and display devices.
p.
170626.
Yarımpabuç, Durmuş
2019.
A Unified Approach to Hyperbolic Heat Conduction of the Semi-infinite Functionally Graded Body with a Time-Dependent Laser Heat Source.
Iranian Journal of Science and Technology, Transactions of Mechanical Engineering,
Vol. 43,
Issue. 4,
p.
729.
Mao, Ningyue
Enrique, Pablo D.
and
Peng, Peng
2023.
Pulsed laser ablation of electrically insulated features in thin NiCr films.
The International Journal of Advanced Manufacturing Technology,
Vol. 128,
Issue. 11-12,
p.
5167.
Cheng, Shichao
Zhang, Xueyan
Liu, Tao
Kong, Xiangran
Yan, Jingdong
Shang, Yunfei
Lei, Zuotao
and
Yang, Chunhui
2025.
Electron beam irradiation modulated vacancy point defect structure transformation in zinc germanium diphosphide crystals.
Materials Today Chemistry,
Vol. 43,
Issue. ,
p.
102461.