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High-Performance Emerging Solid-State Memory Technologies

Published online by Cambridge University Press:  31 January 2011

Abstract

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This article introduces the November 2004 issue of MRS Bulletin on the state of the art in solid-state memory and storage technologies.The memory business drives hundreds of billions of dollars in sales of electronic equipment per year. The incentive for continuing on the historical track outlined by Moore's law is huge, and this challenge is driving considerable investment from governments around the world as well as in private industry and universities. The problem is this: recognizing that current approaches to semiconductor-based memory are limited, what new technologies can be introduced to continue or even accelerate the pace of complexity? The articles in this issue highlight several commercially available memories, as well as memory technologies that are still in the research and development stages. What will become apparent to the reader is the huge diversity of approaches to this problem.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

References

1Collier, C.P.Mattersteig, G.Wong, E.W.Luo, Y.Beverly, K.Sampaio, J.Raymo, F.M.Stoddart, J.F. and Heath, J. R.Science 289 (2000) p. 1172.CrossRefGoogle Scholar
2Duan, X.Huang, Y. and Lieber, C.M.Nano Lett. 2 (2002) p. 487.CrossRefGoogle Scholar
3Collier, C.P.Wong, E.W.Belohradsky, M.Raymo, F.M.Stoddart, J.F.Kuekes, P.J.Williams, R.S. and Heath, J.R.Science 285 (1999) p. 391.CrossRefGoogle Scholar
4Tehrani, S.Slaughter, J.M.DeHerrera, M.Engel, B.N.Rizzo, N.D.Salter, J.Durlam, M.Dave, R.W.Janesky, J.Butcher, B.Smith, K. and Grynkewich, G. in Proc. IEEE 91 (2003) p. 703.CrossRefGoogle Scholar
5Yoon, S.-M. and Ishiwara, H. in IEEE Trans. on Electron Devices 48 (2001) p. 2002.CrossRefGoogle Scholar
6Ma, L.P.Pyo, S.Ouyang, J.Xu, Q. and Yang, Y.Appl. Phys. Lett. 82 (2003) p. 1419.CrossRefGoogle Scholar
7Roth, K.M.Gryko, D.T.Clausen, C.Li, J.Lindsey, J.S.Bocian, D.F. and Kuhr, W.G.J. Phys. Chem. B 106 (2002) p. 8639.CrossRefGoogle Scholar