Hostname: page-component-f554764f5-wjqwx Total loading time: 0 Render date: 2025-04-09T02:42:40.572Z Has data issue: false hasContentIssue false
  • English
  • Français

Fundamentals of Slurry Design for CMP of Metal and Dielectric Materials

Published online by Cambridge University Press:  31 January 2011

Rajiv K. Singh ,
Seung-Mahn Lee ,
Kyu-Se Choi ,
G. Bahar Basim ,
Wonseop Choi ,
Zhan Chen  and
Brij M. Moudgil
Get access

Abstract

The formulation of slurries for chemical–mechanical planarization (CMP) is currently considered more of an art than a science, due to the lack of understanding of the wafer, slurry, and pad interactions involved. Several factors, including the large number of input variables for slurries and the synergistic interplay among input variables and output parameters, further complicate our ability to understand CMP phenomena. This article provides a fundamental basis for the choice of chemical additives and particles needed for present-day and next-generation slurry design. The effect of these components on nanoscale and microscale interaction phenomena is investigated. Methodologies are suggested for the development of next-generation slurries required to overcome CMP challenges related to defectivity and the surface topography of soft materials such as Low-κ dielectrics and copper.

Keywords

chemical–mechanical planarizationchemical–mechanical polishingCMPIOW-K dielectricsnanoparticlesslurry design.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 10: Advances in Chemical-Mechanical Planarization , October 2002 , pp. 752 - 760
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Beyer, K.D., IBM Micronews 5 (1999) p. 40.Google Scholar
2.Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical–Mechanical Planarization of Microelectronic Materials (John Wiley & Sons, New York, 1997).Google Scholar
3.Shon-Roy, L., Solid State Technol. 43 (6) (2000) p. 67.Google Scholar
4.Singh, R.K., Bajaj, R., Moinpour, M., and Meuris, M., eds., Chemical–Mechanical Polishing 2000—Fundamentals and Materials Issues (Mater. Res. Soc. Symp. Proc. 613, Warrendale, PA, 2001).Google Scholar
5.Tucker, T., Plenary talk, “Key Issues Related to CMP Market Segments,” AVS Mtg., San Jose, CA, October 2001.Google Scholar
6.International Technology Roadmap of Semiconductors; ITRS Home Page, http://public.itrs.net/Files/2001ITRS/Home.htm (accessed July 2002).Google Scholar
7.Singh, R.K. and Lee, S.-M., internal analysis performed at the University of Florida (2002).Google Scholar
8.Stein, D.J., Hetherington, D.L., and Cecchi, J.L., J. Electrochem. Soc. 146 (1999) p. 376.CrossRefGoogle Scholar
9.Tseng, W.T., Chin, J.H., and Kang, L.C., J. Electrochem. Soc. 146 (1999) p. 1952.CrossRefGoogle Scholar
10.Stavreva, Z., Zeidler, D., Plotner, M., and Drescher, K., Appl. Surf. Sci. 108 (1997) p. 37.CrossRefGoogle Scholar
11.Mahajan, U., Bielmann, M., and Singh, R.K., Electrochem. Solid-State Lett. 2 (1999) p. 80.CrossRefGoogle Scholar
12.Bielmann, M., Mahajan, U., and Singh, R.K., Electrochem. Solid-State Lett. 2 (1999) p. 401.Google Scholar
13.Mahajan, U., Lee, S.-M., and Singh, R.K., Chemical–Mechanical Polishing 2000—Funda-mentals and Materials Issues, edited by Singh, R.K., Bajaj, R., Moinpour, M., and Meuris, M. (Mater. Res. Soc. Symp. Proc. 613, Warrendale, PA, 2001) p. E1.7.1.Google Scholar
14.Kaufman, F.B., Thompson, D.B., Broadie, R.E., Jaso, M.A., Guthrie, W.L., Pearson, D.J., and Small, M.B., J. Electrochem. Soc. 138 (11) (1991) p. 3460.Google Scholar
15.Bielmann, M., Mahajan, U., Singh, R.K., Agarwal, P., Mischler, S., Rosset, E., and Landolt, D., Chemical–Mechanical Polishing—Fundamentals and Challenges, edited by Babu, S.V., Danyluk, S., Krishnan, M., and Tsujimura, M. (Mater. Res. Soc. Symp. Proc. 566, Warrendale, PA, 2000) p. 97.Google Scholar
16.Basim, G.B., Adler, J.J., Mahajan, U., Singh, R.K., and Moudgil, B.M., J. Electrochem. Soc. 147 (2000) p. 3523.CrossRefGoogle Scholar
17.Lee, S.-M., Choi, W., Craciun, V., Jung, S.-H., and Singh, R.K., “Electrochemical Measurements to Understand the Dynamics of the Chemically Modified Surface Layer Formation During Copper CMP,” presented at Symposium I, Materials Research Society Meeting, San Francisco, April 2002, Paper No. I4.11.Google Scholar
18.Mischler, S., Debaud, S., and Landolt, D., J. Electrochem. Soc. 145 (1998) p. 750.CrossRefGoogle Scholar
19.Cook, L.M., J. Non-Cryst. Solids 120 (1990) p. 152.CrossRefGoogle Scholar
20.Ahmadi, G. and Xia, X., J. Electrochem. Soc. 148 (2001) p. G99.CrossRefGoogle Scholar
21.Yu, T.K., Yu, C.C., and Orlowski, M., in IEDM Tech. Dig. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1993) p. 865.Google Scholar
22.Stein, D.J., Hetherington, D.L., and Cecchi, J.L., J. Electrochem. Soc. 146 (1999) p. 1934.CrossRefGoogle Scholar
23.Kneer, E.A., Raghunath, C., Jeon, J.S., and Raghavan, S., J. Electrochem. Soc. 144 (1997) p. 3041.Google Scholar
24.Stein, D.J., Cecchi, J.L., and Hetherington, D.L., J. Mater. Res. 14 (1999) p. 3695.CrossRefGoogle Scholar
25.Kondo, S., Sakuma, N., Homma, Y., Goto, Y., Ohashi, N., Yamaguchi, H., and Owada, N., J. Electrochem. Soc. 147 (2000) p. 3907.CrossRefGoogle Scholar
26.Brown, N.J., Baker, P.C., and Maney, R.T., in Proc. SPIE Contemporary Methods of Optical Fabrication, Vol. 306 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 1981) p. 42.Google Scholar
27.Singh, R.K., Lee, S.M., and Choi, W. (unpublished manuscript).Google Scholar
28.Bielmann, M., Mahajan, U., Singh, R.K., Shah, D.O., and Palla, B.J., Electrochem. Solid-State Lett. 2 (1999) p. 148.Google Scholar
29.Choi, W., Lee, S.-M., and Singh, R.K., Chemical–Mechanical Polishing 2001—Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001) p. M5.1.1.Google Scholar
30.Preston, F., J. Soc. Glass Technol. 112 (1927) p. 14.Google Scholar
31.Zhao, B. and Shi, F., Electrochem. Solid-State Lett. 2 (1999) p. 145.Google Scholar
32.Liu, C., Dai, B., Tseng, W., and Yeh, C., J. Electrochem. Soc. 143 (1996) p. 716.Google Scholar
33.Choi, W., Lee, S.-M., and Singh, R.K., J. Electrochem. Soc. (2002) submitted for publication.Google Scholar
34.Choi, K.S., Vacassy, R., Bassim, N., and Singh, R.K., Chemical–Mechanical Polishing 2001—Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001) p. M5.8.1.Google Scholar
35.Vacassy, R., Flatt, R.J., Hofmann, H., Choi, K.S., and Singh, R.K., J. Colloid Interface Sci. 227 (2000) p. 302.CrossRefGoogle Scholar
36.Zhao, E. and Xu, C.S., Semicond. Int. 24 (June 2001) p. 145.Google Scholar
37.Morrison, W.R. and Hunt, K.P., U.S. Patent No. 5,938,505 (August 17, 1999).Google Scholar
38.Rosen, M.J., Surfactants and Interfacial Phenomena, 2nd ed. (John Wiley & Sons, New York, 1994).Google Scholar
39.Hunter, R.J., Introduction to Modern Colloid Science (Oxford University Press, New York, 1994).Google Scholar
40.Chen, Z. and Singh, R.K., J. Colloid Interface Sci. 245 (2002) p. 301.Google Scholar
41.Singh, P.K., Adler, J.J., Rabinovich, Y.I., and Moudgil, B.M., Langmuir 17 (2001) p. 468.CrossRefGoogle Scholar
42.Adler, J.J., Singh, P.K., Patist, A., Rabinovich, Y.I., Shah, D.O., and Moudgil, B.M., Langmuir 16 (2000) p. 7255.Google Scholar