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Fundamental Concepts of Ion-Solid Interactions: Single Ions, 10−12 Seconds

Published online by Cambridge University Press:  29 November 2013

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An energetic ion undergoes two major mechanisms of energy loss: (1) screened Coulomb collisions with target atoms (nuclear stopping), and (2) interactions with bound or free electrons in the solid (electronic stopping). This article discusses how these two energy-loss processes—and related quantities such as the ion range, collision cascade behavior, sputtering, and spike effects—depend on the experimental parameters of beam energy, atomic number, and target density. We restrict ourselves to an individual incident ion and a time scale (~10−12 s) sufficient for the cascade to fully develop (Figure 1), but short enough for subsequent quenching or diffusion processes to be ignored. What happens at longer times and higher ion f luences, due to diffusion and cascade overlap phenomena, is treated in the article by Brown and Ourmazd in this issue of the MRS Bulletin.

Energy-Loss Concepts

Figure 2 summarizes the velocity (ε1/2) dependence of the two energy-loss processes, nuclear stopping (dε/dρ)n and electronic stopping (dε/dρ)e, in terms of the dimensionless Thomas-Fermi (TF) energy, ε, and length, ρ, units derived by Lindhard. The energy unit ε is defined as the ratio a/b where a is the TF screening length (typically, ~0.01 nm) and b is the distance of closest approach in an unscreened head on collision. The following simple relationship exists between TF and lab energies.

where M1, Z1, M2, and Z2 are the masses and atomic numbers of projectile and target atoms.

Type
Ion-Assisted Processing of Electronic Materials
Copyright
Copyright © Materials Research Society 1992

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References

1.Lindhard, L., Scharff, M., and Schiott, H.E., Kgl. Dan. Vid. Selsk. Mat. fys. Medd. 33 (14) (1963).Google Scholar
2.Mayer, J.W., Eriksson, L., and Davies, J.A., Ion Implantation in Semiconductors (Academic Press, New York, 1970), Tables 2.1-2.6 and related text.Google Scholar
3.Winterbon, K.B., Ion Implantation Range and Energy Distributions, Vol. 2, Low Energy (Plenum Press, New York, 1975).CrossRefGoogle Scholar
4.Biersack, J.P. and Haggemark, L.G., Nucl. Instrum. Methods 174 (1980) p. 257; also, W.G. Eckstein and J.P. Biersack, Appl. Phys. A37 (1985) p. 95 and A38 (1985) p. 123.CrossRefGoogle Scholar
5.Lindhard, J., Kgl. Dan. Vid. Selsk. Mat. fys. Medd. 34 (14) (1965).Google Scholar
6.Lindhard, J., Nielsen, V., Scharff, M., and Thompsen, P.V., Kgl. Dan. Vid. Selsk. Mat. fys. Medd. 33 (10) (1963).Google Scholar
7.Haines, E.L. and Whitehead, A.B., Rev. Sci. Instrum. 37 (1966) p. 190.CrossRefGoogle Scholar
8.Sigmund, P., App Phys. Lett. 14 (1969) p. 114.CrossRefGoogle Scholar
9.Winterbon, K.B., Sigmund, P., and Sanders, J.B., Kgl. Dan. Vid. Selsk. Mat. fys. Medd. 37 (14) (1970).Google Scholar
10.Walker, R.S. and Thompson, D.A., Radiat. Eff. 37 (1978) p. 113.CrossRefGoogle Scholar
11.Thompson, D.A., Radiat. Eff. 56 (1981) p. 105.CrossRefGoogle Scholar
12.Sigmund, P., Appl. Phys. Lett. 25 (1974) p. 169; plus an erratum in 27 (197) p. 52.CrossRefGoogle Scholar
13.Carter, G. and Armour, D.G., Thin Solid Films 80 (1981) p. 13; also the earlier work of E.V. Kornelsen, Can. J. Phys. 42 (1964) p. 364.CrossRefGoogle Scholar
14.Kornelsen, E.V., Radiat. Eff. 13 (1972) p. 227.CrossRefGoogle Scholar