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The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

Published online by Cambridge University Press:  29 November 2013

F.K. LeGoues
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Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-based p-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in any p-type material for the same design rule.

Type
Heteroepitaxy and Strain
Information
MRS Bulletin , Volume 21 , Issue 4 , April 1996 , pp. 38 - 44
Copyright
Copyright © Materials Research Society 1996

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