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Atomic Layer-by-Layer Engineering of High Tc Materials and Heterostructure Devices

Published online by Cambridge University Press:  29 November 2013

J.N. Eckstein ,
I. Bozovic  and
G.F. Virshup
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Extract

Oxides exhibit most of the interesting phenomena known to occur in solid-state systems. As a class of materials they may be richer in phenomenology than any other comparable class. Oxides can be insulators, semiconductors, or metals. The copperoxide-based compounds we have studied are superconductors with the highest critical temperatures. In some oxides, electrons manifest simple single-particle transport properties, with a high mobility; in others, they show strongly correlated behavior resulting in a Mott-Hubbard transition, localization, and charge- or spin-density waves. In some oxides, electron-phonon coupling leads to polaronic transport. Others show collective states such as magnetism; in some there are large local magnetic moments that can couple to form ferromagnetic or antiferromagnetic phases that exist up to high temperatures. Yet others have large nonlinear dielectric and optical properties. In fact, it would seem there is very little that some such oxide couldn't do for or to the experimenter.

Type
Crystal Engineering of High Tc-Related Oxide Films
Information
MRS Bulletin , Volume 19 , Issue 9 , September 1994 , pp. 44 - 50
Copyright
Copyright © Materials Research Society 1994

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References

1.Goodenough, J., in Progress in Solid State Chemistry 5, edited by Reiss, H. (Pergamon Press, Oxford, 1971) p. 145.Google Scholar
2.Tsuda, N., Nasu, K., Yanase, A., and Siratori, K., Electronic Conduction in Oxides (Springer, Berlin, 1991).CrossRefGoogle Scholar
3.Eckstein, J.N., Bozovic, I., Klausmeier-Brown, M.E., Virshup, G.F., and Rails, K.S., MRS Bulletin XVII (8) (1992), p. 27.CrossRefGoogle Scholar
4.Bozovic, I., Eckstein, J.N., Klausmeier-Brown, M.E., and Virshup, G.F., Journal of Superconductivity 5 (1992) p. 19.CrossRefGoogle Scholar
5.Virshup, G.F., Klausmeier-Brown, M.E., Bozovic, I., and Eckstein, J.N., Appl. Phys. Lett. 60 (1992) p. 2288.CrossRefGoogle Scholar
6.Klausmeier-Brown, M.E., Virshup, G.F., Bozovic, I., and Eckstein, J.N., Appl. Phys. Lett 61 (1992) p. 2806.CrossRefGoogle Scholar
7.Eckstein, J.N., Bozovic, I., and Virshup, G.F., SPIE Proc. 2157, Superconducting Superlattices and Multilayers (SPIE, Bellingham, 1994) in press.Google Scholar
8.Klausmeier-Brown, M.E., Eckstein, J.N., Bozovic, I., and Virshup, G.F., Appl. Phys. Lett. 60 (1992) p. 657.CrossRefGoogle Scholar
9.Berkley, D.D., Johnson, B.R., Anand, N., Beauchamp, K.M., Conroy, L.E., and Goldman, A.M., Appl. Phys. Lett. 53 (1988) p. 1973.CrossRefGoogle Scholar
10.Tamegai, T., Koga, K., Suzuki, K., Ichihara, M., Sakai, F., and Iye, Y., Jpn. Appl. Phys. Lett. 28 (1989) p. 112.CrossRefGoogle Scholar
11.Hamilton, C.A., Kautz, R.L., Steiner, R.L., and Frances, Lloyd, L., IEEE EDL-6 (1985) p. 623.Google Scholar
12.Shklovskii, B.I. and Efros, A.L., Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).CrossRefGoogle Scholar
13.Glazman, L.I. and Matveev, K.A., Sov. Phys. JETP. 67 (1988) p. 1276.Google Scholar