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Advances in Chemical-Mechanical Planarization

Published online by Cambridge University Press:  31 January 2011

Rajiv K. Singh  and
Rajeev Bajaj
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Abstract

The primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Keywords

chemical–mechanical planarizationchemical–mechanical polishingCMPcopper interconnectsLow-κ dielectricsnanotopographyshallow trench isolationsilica polishingslurry design.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 10: Advances in Chemical-Mechanical Planarization , October 2002 , pp. 743 - 751
Copyright
Copyright © Materials Research Society 2002

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