Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Kanzawa, Y.
Nozawa, K.
Saitoh, T.
and
Kubo, M.
2000.
Dependence of substitutional C incorporation on Ge content for Si1−x−yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition.
Applied Physics Letters,
Vol. 77,
Issue. 24,
p.
3962.
Berti, M
De Salvador, D
Drigo, A.V
Petrovich, M
Stangl, J
Schäffler, F
Zerlauth, S
Bauer, G
and
Armigliato, A
2000.
Metastability of Si1−yCy epilayers under 2MeV α-particle irradiation.
Micron,
Vol. 31,
Issue. 3,
p.
285.
Kanzawa, Y.
Saitoh, T.
and
Kubo, M.
2001.
Thermal-annealing dependence of C-related atomic configuration in Si1−x−yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition.
Applied Physics Letters,
Vol. 78,
Issue. 17,
p.
2515.
LeThanh, V
Calmes, C
Zheng, Y
Bouchier, D
Fortuna, V
and
Dupuy, J.-C
2002.
In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system.
Materials Science and Engineering: B,
Vol. 89,
Issue. 1-3,
p.
246.
Ito, Tomonori
and
Kangawa, Yoshihiro
2002.
Theoretical investigations of thermodynamic stability for Si1−x−yGexCy.
Journal of Crystal Growth,
Vol. 237-239,
Issue. ,
p.
116.
LeThanh, Vinh
Calmes, C.
Zheng, Y.
and
Bouchier, D.
2002.
Multilayer-array growth of SiGeC alloys on Si(001).
Applied Physics Letters,
Vol. 80,
Issue. 1,
p.
43.
Mil’vidsky, M. G.
2002.
Semiconductor silicon at the threshold of twenty-first century.
Crystallography Reports,
Vol. 47,
Issue. S1,
p.
S3.
Ito, Tomonori
Nakamura, Kohji
Kangawa, Yoshihiro
Shiraishi, Kenji
Taguchi, Akihito
and
Kageshima, Hiroyuki
2003.
Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films.
Applied Surface Science,
Vol. 216,
Issue. 1-4,
p.
458.
Zhang, Dalin
Liu, Zhi
Zhang, Dongliang
Zhang, Xu
Zhang, Junying
Zheng, Jun
Zuo, Yuhua
Xue, Chunlai
Li, Chuanbo
Oda, Shunri
Cheng, Buwen
and
Wang, Qiming
2015.
Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy.
The Journal of Physical Chemistry C,
Vol. 119,
Issue. 31,
p.
17842.
Shen Hao
Li Dong-Sheng
and
Yang De-Ren
2015.
Research progress of silicon light source.
Acta Physica Sinica,
Vol. 64,
Issue. 20,
p.
204208.
Lockwood, David J.
Wu, Xiaohua
Baribeau, Jean-Marc
Mala, Selina A.
Wang, Xiaolu
and
Tsybeskov, Leonid
2016.
Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission.
Frontiers in Materials,
Vol. 3,
Issue. ,
Zimmermann, Horst
2018.
Silicon Optoelectronic Integrated Circuits.
Vol. 13,
Issue. ,
p.
115.
Wang, Nan
Xue, Chunlai
Wan, Fengshuo
Zhao, Yue
Xu, Guoyin
Liu, Zhi
Zheng, Jun
Zuo, Yuhua
Cheng, Buwen
and
Wang, Qiming
2020.
Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn.
Scientific Reports,
Vol. 10,
Issue. 1,