Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-09T19:49:19.905Z Has data issue: false hasContentIssue false

Unusual Phenomena in Exchange-Biased Nanostructures

Published online by Cambridge University Press:  31 January 2011

Get access

Abstract

The following article is an edited transcript based on the MRS Medalist presentation given by Ivan K.Schuller of the University of California, San Diego, on December 3, 2003, at the Materials Research Society Fall Meeting in Boston.Schuller received the MRS Medal for “his innovative studies of exchange bias in magnetic heterostructures and nanostructures.” Magnetic nanostructures have received increasing attention in recent years, motivated by the interesting phenomena that are apparent when physical size becomes comparable with relevant magnetic length scales.In addition, a number of important potential applications in the sensors and storage industries have emerged. When magnetic nanostructures are in contact with dissimilar magnetic materials, and because their magnetic fields extend considerably outside the physical structure, they are very susceptible to interaction with the surrounding environment.A particularly interesting situation is a ferromagnetic nanostructure in contact with an anti-ferromagnetic substrate.In this “exchange-biased” configuration, a variety of unusual phenomena arise:The reversal mode of the ferromagnet changes considerably, the superparamagnetic transition temperature is affected, and there is a noticeable change in the microscopic spin configuration.A series of experiments will be described involving these phenomena in nanostructured ferromagnets prepared by electron-beam lithography and self-assembly.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1For a review, see Nogues, J. and Schuller, I.K.J.Magn. Magn. Mater. 192 (1999) p.203.CrossRefGoogle Scholar
2Meiklejohn, W.H. and Bean, C.P.Phys. Rev. 102 (1956) p.1413.CrossRefGoogle Scholar
3“Motorola Produces World's First 4 Mbit MRAM Chip,” SpaceDaily Home Page (October 28, 2003), http://www.spacedaily.com/news/chip-tech-03u.html (accessed August 2004).Google Scholar
4“The Blind Men and the Elephant,” Buddhist Udana, ca. 100 B.C.Google Scholar
5For example, see Fullerton, E.E.Schuller, I.K. and Bruynseraede, Y.MRS Bull. XVII (12) (1992) p.33.CrossRefGoogle Scholar
6Nogues, J.Lederman, D.Schuller, I.K. and Rao, K.V.Appl. Phys. Lett. 68 (1996) p.3186.CrossRefGoogle Scholar
7Nogues, J., Lederman, D.Moran, T.J. and Schuller, I.K., Phys. Rev. Lett. 76 (1996) p.4624.CrossRefGoogle Scholar
8Fitzsimmons, M.R.Yashar, P.Leighton, C.Schuller, I.K.Nogues, J., Majkrzak, C.F. and Dura, J.A.Phys. Rev. Lett. 84 (2000) p.3986.CrossRefGoogle Scholar
9Tillmanns, A.Oertker, S.Beschoten, B.Güntherodt, G., Eisenmenger, J.Leighton, C.Schuller, I.K. and Nogues, J. Appl. Phys. Lett. (2004) submitted for publication.Google Scholar
10Nikitenko, V.I.Gornakov, V.S.Shapiro, A.J.Shull, R.D.Liu, K.Zhou, S.M. and Chien, C.L.Phys. Rev. Lett. 84 (2000) p. 765.CrossRefGoogle Scholar
11Chopra, H.D.Yang, D.X.Chen, P.J.Brown, H.J.Swartzendruber, L.J. and Egelhoff, W.F. Jr, Phys. Rev. B. 61 15312 (2000).CrossRefGoogle Scholar
12Portier, X.PetfordLong, A.K., Morais, A. de, Owen, N.W.Laidler, H. and O'Grady, K., J. Appl. Phys. 87 (2000) p. 6412.CrossRefGoogle Scholar
13Panagiotopoulos, I.Moutis, N. and Christides, C.Phys. Rev. B. 65 132407 (2002).CrossRefGoogle Scholar
14Cable, J.W.Khan, M.R.Felcher, G.P. and Schuller, I.K.Phys. Rev. B 34 (1986) p. 1643; J.F., MacKay, C., Teichert, D.E., Savage and M.G., Lagally Phys. Rev. Lett. 77 (1996), p. 3925.CrossRefGoogle Scholar
15Eisenmenger, J. and Schuller, I.K.Nat. Mater. 2 (2003) p.437.CrossRefGoogle Scholar