Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T19:53:54.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate Selection for Thin-Film Growth

Published online by Cambridge University Press:  29 November 2013

Julia M. Phillips
Get access

Extract

Although it is an integral part of any structure involving a film, the substrate is often taken for granted. The choice of substrate is, however, one of the most important materials issues in thin-film growth. This article focuses on substrates for thin films and will provide criteria for selecting the proper material needed to fill specific application requirements. As will become obvious, the ideal substrate for a given film often does not exist. Specific applications require different substrate materials that offer an acceptable compromise for the purpose at hand. Ideally, the substrate should give mechanical support but not interact with the film except to provide sufficient adhesion, and in many cases, the provision of a template for atomic ordering. In practice, however, the substrate exerts considerable influence on film characteristics. The search for viable substrate materials is an active area of research.

Type
Technical Features
Information
MRS Bulletin , Volume 20 , Issue 4 , April 1995 , pp. 35 - 39
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. “Semiconductor Interfaces: Formation and Properties,” in Springer Proc. in Phys., edited by Lelay, G., Derrien, J., and Boccara, N. (Springer-Verlag, Berlin, 1987).Google Scholar
2.Thin Films—Interfaces and Phenomena, edited by Nemanich, R.J., Ho, P.S., and Lau, S.S. (Mater. Res. Soc. Symp. Proc. 54, Pittsburgh, 1986).Google Scholar
3.Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Symp. Proc. 67, Pittsburgh, 1986).Google Scholar
4.Materials Issues in Silicon Integrated Circuit Processing, edited by Wittmer, M., Stimmel, J., and Strathman, M. (Mater. Res. Soc. Symp. Proc. 71, Pittsburgh, 1986).Google Scholar
5.Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y. (Mater. Res. Soc. Symp. Proc. 91, Pittsburgh, 1987).Google Scholar
6.Phillips, J.M., Siegal, M.P., van Dover, R.B., Tiefel, T.H., Marshall, J.H., Brandle, C.D., Berkstresser, G., Strauss, A.J., Fahey, R.E., Sengupta, S., Cassanho, A., and Jenssen, H.P., J. Mater. Res. 7 (1992) p. 2650.CrossRefGoogle Scholar
7.Epitaxial Oxide Thin Films and Heterostruc-tures, edited by Fork, D.K., Phillips, J.M., Ramesh, R., and Wolf, R.M. (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, 1994).Google Scholar
8.Fork, D.K., Fenner, D.B., Connell, G.A.N., Phillips, J.M., and Geballe, T.H., Appl. Phys. Lett. 57 (1990) p. 1137.CrossRefGoogle Scholar
9.Vossen, J.L. in Physics of Thin Films, vol. 14 (Academic Press, Boston, 1989) p. 201.Google Scholar
10.Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by Nemanich, R.J., Helms, C.R., Hirose, M., and Rubloff, G.W. (Mater. Res. Soc. Symp. Proc. 259, Pittsburgh, 1992).Google Scholar
11.Grunthaner, F.J. and Grunthaner, P.J., Mater. Sci. Rep. 65 (1) (1986).Google Scholar
12.Lyons, W.G., Withers, R.S., Hamm, J.M., Anderson, A.C., Oates, D.E., Mankiewich, P.M., O'Malley, M.L., Bonetti, R.R., Williams, A.E., and Newman, N., Proc. 5th Conf. on Superconductivity and Applications, edited by Kao, T.H., Kwok, H.S., and Kaloyeros, A.E. (American Institute of Physics 251, New York, 1992) p. 639.Google Scholar
13.O'Bryan, H.M., Gallagher, P.K., Berkstresser, G.W., and Brandle, C.D., J. Mater. Res. 5 (1990) p. 183.CrossRefGoogle Scholar
14.Layered Superconductors: Fabrication, Properties and Applications, edited by Shaw, D.T., Tsuei, C.C., Schneider, T.R., and Shiohara, Y. (Mater. Res. Soc. Symp. Proc. 275, Pittsburgh, 1992).Google Scholar
15.Zogg, H., Vogt, W., and Melchior, H. (Mater. Res. Soc. Symp. Proc. 71, Pittsburgh, 1987) p. 87.CrossRefGoogle Scholar
16.Char, K., Coclough, M.S., Lee, L.P., and Zaharchuk, G., Appl. Phys. Lett. 59 (1991) p. 2177.CrossRefGoogle Scholar
17.Pashley, D.W., in Epitaxial Growth, edited by Matthews, J.W. (Academic Press, New York, 1975).Google Scholar
18.Moeckly, B.H., Russek, S.E., Lathrop, D.K., Buhrman, R.A., Li, J., and Mayer, J.W., Appl. Phys. Lett. 57 (1990) p. 1687.CrossRefGoogle Scholar
19.Bauer, E.G., Dodson, B.W., Ehrlich, D.J., Feldman, L.C., Flynn, C.P., Geis, M.W., Harbison, J.P., Matyi, R.J., Peercy, P.S., Petroff, P.M., Phillips, J.M., Stringfellow, G.B., and Zangwill, A., J. Mater. Res. 5 (1990) p. 852.CrossRefGoogle Scholar
20.Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices, edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mater. Res. Soc. Symp. Proc. 116, Pittsburgh, 1988).Google Scholar
21.Guo, R., Bhalla, A.S., Cross, L.E., and Roy, R., J. Mater. Res. 9 (1994) p. 1644.CrossRefGoogle Scholar
22.Chan, S-W., J. Phys. Chem. Solids (June 1994).Google Scholar
23.Brorsson, G., Olsson, E., Ivanov, Z.G., Stepantsov, E.A., Alarco, J.A., Boikov, Y., Claeson, T., Berastegui, P., Langer, V., and Lofgren, M., J. Appl. Phys. 75 (1994) p. 7958.CrossRefGoogle Scholar