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Oxide Dilute Magnetic Semiconductors—Fact or Fiction?

Published online by Cambridge University Press:  31 January 2011

J.M.D. Coey  and
S.A. Chambers
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Abstract

Magnetism in oxides was thought to be well-understood in terms of localized magnetic moments and double-exchange or superexchange rules. This understanding was shaken by the publication of an article in 2001 stating that thin films of anatase TiO2 with only 7 at.% Co substitution had a Curie point in excess of 400 K [Matsumoto et al., Science291, 854 (2001)]. Room-temperature ferromagnetism had previously been predicted for p-type ZnO with 5 at.% Mn [Dietl et al., Science287, 1019 (2000)]. A flood of reports of thin films and nanoparticles of new oxide “dilute magnetic semiconductors” (DMSs) followed, and high-temperature ferromagnetism has been reported for other systems with no 3dcations. The expectation that these materials would find applications in spintronics motivated research in this area. Unfortunately, the data are plagued by instability and a lack of reproducibility. In many cases, the ferromagnetism can be explained by uncontrolled secondary phases; it is absent in well-crystallized films and bulk material. However, it appears that some form of high-temperature ferromagnetism can result from defects present in the oxide films [Coey, Curr. Opin. Solid State Mater. Sci.10, 83 (2007); Chambers, Surf. Sci. Rep.61, 345 (2006)], although they are not DMSs as originally envisaged.

Type
Research Article
Information
MRS Bulletin , Volume 33 , Issue 11: Whither Oxide Electronics? , November 2008 , pp. 1053 - 1058
Copyright
Copyright © Materials Research Society 2008

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References

1.Matsumoto, Y., Murakami, M., Shono, T., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Chikyow, T., Koshihara, S., Koinuma, H., Science 291, 854 (2001).CrossRefGoogle Scholar
2.Coey, J.M.D., Curr. Opin. Solid State Mater. Sci. 10, 83 (2007).CrossRefGoogle Scholar
3.Chambers, S.A., Surf. Sci. Rep. 61, 345 (2006).CrossRefGoogle Scholar
4.Bibes, M., Herranz, G., Barthélémy, A., Rep. Prog. Phys., in press.Google Scholar
5.Ohno, H., Science 282, 951 (1998).CrossRefGoogle Scholar
6.Jungwirth, T., Wang, K.Y., Masšek, J., Edmonds, K.W., König, Jürgen, Sinova, Jairo, Polini, M., Goncharuk, N. A., MacDonald, A. H., Sawicki, M., Rushforth, A. W., Campion, R. P., Zhao, L. X., Foxon, C. T., and Gallagher, B. L., Phys. Rev. B 72, 165204 (2005).CrossRefGoogle Scholar
7.Dietl, T., Ohno, H., Matsukura, F.. Cibert, J., Ferrand, D., Science 287, 1019 (2000).CrossRefGoogle Scholar
8.Goodenough, J.B., Magnetism and the Chemical Bond (Interscience, New York, 1963).Google Scholar
9.Lawes, G., Risbud, A.S., Ramirez, A.P., Seshadri, R., Phys. Rev. B 71, 045201 (2005).CrossRefGoogle Scholar
10.Rao, C.N.R., Deepak, F.L., J. Mater. Chem. 15, 573 (2005).CrossRefGoogle Scholar
11.Coey, J.M.D., Venkatesan, M., Fitzgerald, C.B., Nat. Mater. 4, 173 (2005).CrossRefGoogle Scholar
12.Abraham, D.W., Frank, M.M., Guha, S., Appl. Phys. Lett. 87, 252502 (2005).CrossRefGoogle Scholar
13.Kaspar, T.C., Droubay, T., Heald, S.M., Engelhard, M.H., Nachimuthu, P., Chambers, S.A., Phys. Rev. B 77, 201303(R) (2008).CrossRefGoogle Scholar
14.Dorneles, L.S., Venkatesan, M., Gunning, R., Stamenov, P., Alaria, J., Rooney, M.. Lunney, J. G., Coey, J. M. D., J. Magn. Magn. Mater. 310, 207 (2006).Google Scholar
15.Kaspar, T.C., Heald, S.M., Wang, C.M., Bryan, J.D., Droubay, T., Shutthanandan, V., Thevuthasan, T., McCready, D.E., Kellock, A.J., Gamelin, D.R., Chambers, S.A., Phys. Rev. Lett. 95, 217203 (2005).CrossRefGoogle Scholar
16.Kaspar, T.C., Droubay, T., Shutthanandan, V., Heald, S.M., Wang, C.M., McCready, D.E., Thevuthasan, S., Bryan, J.D., Gamelin, D.R., Kellock, A.J., Toney, M.F., Hong, X., Ahn, C.H., Chambers, S.A., Phys. Rev. B 73, 155327 (2006).CrossRefGoogle Scholar
17.Ye, L., Freeman, A.J., Phys. Rev. B 73, 081304 (2006).CrossRefGoogle Scholar
18.Edwards, D. M., Katsnelson, M. I., J. Phys. Condens. Matter 18, 7209 (2006).CrossRefGoogle Scholar
19.Sunderesan, A., Bhargavi, R., Rangarajan, N., Siddesh, U., Rao, C.N.R., Phys. Rev. B 74, 161306 (2006).CrossRefGoogle Scholar
20.Venkatesan, M., Fitzgerald, C.B., Coey, J.M.D., Nature 430, 630, (2004).CrossRefGoogle Scholar
21.Yoon, S., Chen, Y., Yang, A., Goodrich, T., Zuo, X., Arena, D., Ziemer, K., Vittoria, C., Harris, V., J. Phys.: Condens. Matter 18, L355 (2006).Google Scholar
22.Hong, N.H., Sakai, J., Poirot, N., Brizé, V., Phys. Rev. B 73, 132404 (2006).CrossRefGoogle Scholar
23.Pan, H., Yi, J.B., Shen, L., Wu, R.Q., Yang, J.H., Lin, J.Y., Feng, Y.P., Ding, J., Van, L.H., Yin, J.H., Phys. Rev. Lett. 99, 127201 (2007).CrossRefGoogle Scholar
24.Coey, J.M.D., Solid State Sci. 7, 660 (2005).CrossRefGoogle Scholar
25.Pemmaraju, C.D., Sanvito, S., Phys. Rev. Lett. 94, 217205 (2005).CrossRefGoogle Scholar
26.Chambers, S.A., Farrow, R.F.C., MRS Bull. 28, 729 (2003).CrossRefGoogle Scholar
27.Kaspar, T.C., Droubay, T., McCready, D.E., Heald, S.M., Wang, C.M., Lea, A.S., Shutthanandan, V., Chambers, S.A., J. Vac. Sci. Technol. B 24, 2012 (2006).CrossRefGoogle Scholar
28.Esquinazi, P., Spemann, D., Hohne, R., Setzer, A., Han, K.H., Bultz, T., Phys. Rev. Lett. 91, 227201 (2003).CrossRefGoogle Scholar
29.Carmeli, I., Leitus, G., Naaman, R., Reich, S., Vager, Z., J. Chem. Phys. 118, 10372 (2003).CrossRefGoogle Scholar
30.Garitaonandia, J.S., Inasausti, M., Goikolea, E., Suzuki, M., Cashion, J.D., Kawamura, N., Ohsawa, H., de Muro, I.G., Suzuki, K., Plazaola, F., Rojo, T., Nano Lett. 8, 661 (2008).CrossRefGoogle Scholar
31.Tsui, F., He, L., Ma, L., Tkachuk, A., Chu, Y.S., Nakajima, K., Chikyou, T., Phys. Rev. Lett. 91, 177203 (2003).CrossRefGoogle Scholar
32.Kopnov, G., Vager, Z., Naaman, R., Adv. Mater. 19, 925 (2007).CrossRefGoogle Scholar
33.Coey, J.M.D., Wongsaprom, K., Alaria, J., Venkatesan, M., J. Phys. D 41, 134012 (2008).CrossRefGoogle Scholar