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New Possibilities for Ferromagnetic Semiconductors

Published online by Cambridge University Press:  31 January 2011

Scott A. Chambers  and
Robin F.C. Farrow
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Abstract

New candidate ferromagnetic semiconductors have recently been grown by doping semiconducting transition-metal oxides with magnetic impurities. Some of these exhibit ferromagnetism at and above room temperature. The critical question is why? In many cases, complex solid-state chemistry is involved in the synthesis and drives the resulting properties. The observation of room-temperature ferromagnetism in these materials must be accompanied by a careful identification of the phases and structures present in order to accurately identify the origin of the magnetism.

Keywords

magnetic materialsmolecular-beam epitaxy (MBE)semiconductorsspin-polarized materialsspintronics
Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 10: New Materials for Spintronics , October 2003 , pp. 729 - 733
Copyright
Copyright © Materials Research Society 2003

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References

1.Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287 (2000) p. 1019.CrossRefGoogle Scholar
2.Fukumura, T., Jin, Z., Kawasaki, M., Shono, T., Hasegawa, T., Koshihara, S., and Koinuma, H., Appl. Phys. Lett. 78 (2001) p. 958.CrossRefGoogle Scholar
3.Thaler, G.T., Overberg, M.E., Gila, B., Frazier, R., Abernathy, C.R., Pearton, S.J., Lee, J.S., Lee, S.Y., Park, Y.D., and Zhim, Z.G., Appl. Phys. Lett. 80 (2002) p. 3964.CrossRefGoogle Scholar
4.Sato, K. and Katayama-Yoshida, H., Jpn. J. Appl. Phys., Part 2: Lett. 39 (2000) p. L555; 40 (2001) p. L334.CrossRefGoogle Scholar
5.Ueda, K., Tabata, H., and Kawai, T., Appl. Phys. Lett. 79 (2001) p. 988.CrossRefGoogle Scholar
6.Matsumoto, Y., Murakami, M., Shono, T., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Chikyow, T., Koshihara, S.-Y, and Koinuma, H., Science 291 (2001) p. 854.CrossRefGoogle Scholar
7.Matsumoto, Y., Murakami, M., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Nakajima, K., Chikyow, T., Koshihara, S.-Y., and Koinuma, H., Appl. Surf. Sci. 189 (2002) p. 344.CrossRefGoogle Scholar
8.Chambers, S.A., Thevuthasan, S., Farrow, R.F.C., Marks, R.F., Thiele, J.-U., Folks, L., Samant, M.G., Kellock, A.J., Ruzycki, N., Ederer, D.L., and Diebold, U., Appl. Phys. Lett. 79 (2001) p. 3467.CrossRefGoogle Scholar
9.Tuan, A.C., Shutthanandan, V., Thevuthasan, S., McCready, D.E., Gaspar, D., Engelhard, M., Pakomov, A., Bryan, J.D., Gamelin, D.R., Rogers, J.W. Jr., and Chambers, S.A., Phys. Rev. B (2003) submitted for publication.Google Scholar
10.Park, W.K., Ortega-Hertogs, R.J., Moodera, J.S., Punnoose, A., and Seehra, M.S., J. Appl. Phys. 91 (2002) p. 8093.CrossRefGoogle Scholar
11.Shim, I.-B., An, S.-Y., Kim, C.S., Choi, S.-Y., and Park, Y.W., J. Appl. Phys. 91 (2002) p. 7914.CrossRefGoogle Scholar
12.Soo, Y.L., Kioseoglou, G., Kim, S., Kao, Y.H., Sujatha Devi, P., Parise, J., Gambino, R.J., and Gouma, P.I., Appl. Phys. Lett. 81 (2002) p. 655.CrossRefGoogle Scholar
13.Kim, D.H., Yang, J.S., Lee, K.W., Bu, S.D., Noh, T.W., Oh, S.-J., Kim, Y.-W., Chung, J.-S., Tanaka, H., Lee, H.Y., and Kawai, T., Appl. Phys. Lett. 81 (2002) p. 2421.CrossRefGoogle Scholar
14.Stampe, P.A., Kennedy, R.J., Xin, Y., and Parker, J.S., J. Appl. Phys. 92 (2002) p. 7114.CrossRefGoogle Scholar
15.Shinde, S.R., Ogale, S.B., Das Sarma, S., Simpson, J.R., Drew, H.D., Lofland, S.E., Land, C., Buban, J.P., Browning, N.D., Kiukarni, V.N., Higgins, J., Sharma, R.P., Greene, R.L., and Venkatesan, T., Phys. Rev. B 67 115211 (2003).CrossRefGoogle Scholar
16.Kim, J.-K., Park, J.-H., Park, B.-G., Noh, H.-J., Oh, S.-J., Yang, J.S., Kim, D.-H., Bu, S.D., Noh, T.-W.Lin, H.-J., Hsieh, H.-H., and Chen, C.T., Phys. Rev. Lett. 90 017401 (2003).CrossRefGoogle Scholar
17.Chambers, S.A., Wang, C.M., Thevuthasan, S., Droubay, T.McCready, D.E., Lea, A.S., Shutthanandan, V., and Windisch, C.F. Jr., Thin Solid Films 418 (2002) p. 197.CrossRefGoogle Scholar
18.Droubay, T. and Chambers, S.A. (unpublished).Google Scholar
19.Chambers, S.A., Droubay, T., Wang, C.M., Lea, A.S., Farrow, R.F.C., Folks, L., Deline, V., and Anders, S., Appl. Phys. Lett. 82 (2003) p. 1257.CrossRefGoogle Scholar
20.deGroot, F.M.F., Figueiredo, M.O., Basto, M.J., Abbate, M., Petersen, H., and Fuggle, J.C., Physics and Chemistry of Mineralogy, Vol. 19 (Springer-Verlag, Heidelberg, 1992) p. 1400.Google Scholar
21.Chambers, S.A., Heald, S.M., and Droubay, T., Phys. Rev. B 67 100401(R) (2003).CrossRefGoogle Scholar
22.Westre, T.E., Kennepohl, P., DeWitt, J.G., Hedman, B., Hodgson, K.O., and Solomon, E.I., J. Am. Chem. Soc. 119 (1997) p. 6297.CrossRefGoogle Scholar
23.Sullivan, J.M. and Erwin, S.C., Phys. Rev. B 67 144415 (2003).CrossRefGoogle Scholar
24.Yang, Z., Liu, G., and Wu, R., Phys. Rev. B 67 060402(R) (2003).CrossRefGoogle Scholar
25.Park, M.S., Kwon, S.K., and Min, B.I., Phys. Rev. B 65 161201(R) (2002).CrossRefGoogle Scholar
26.Bertram, F., Srinvasan, S., Geng, L., Ponce, F.A., Riemann, T., Christen, J., Tanaka, S., Omiya, H., and Nakagawa, Y., Phys. Status Solidi B 228 (2001) p. 35.3.0.CO;2-1>CrossRefGoogle Scholar
27.Scolfaro, L.M.R., Phys. Status Solidi A 190 (2002) p. 15.3.0.CO;2-A>CrossRefGoogle Scholar
28.Tabata, A., Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Kharchenko, A., Frey, T., As, D.J., Schikora, D., and Lischka, K., Appl. Phys. Lett. 80 (2002) p. 769.CrossRefGoogle Scholar