Tonight I will talk about molecular beam epitaxy (MBE) from research to manufacturing. First I will discuss the introduction of MBE in the early 1970s and the exciting achievements made with it. I will conclude with some new directions for MBE.

First let us review this technology. Through MBE, materials like semiconducting materials, metals, and insulating materials are grown, atom layer by atom layer. Figure 1 shows a stainless steel MBE chamber, pumped to a pressure of approximately 10−10 torr, with liquid-nitrogen-cooled shrouds to further condense the water vapor in the vacuum system. To grow gallium arsenide (GaAs), we mount a substrate in the center where it continuously rotates to give us the uniformity we need, and it is heated to about 580° or 600°C. The effusion cells are filled with pure Ga, pure As, and doping elements such as silicon for n-type doping, and then germanium or beryllium for p-type doping. Important in this MBE system are the in situ monitoring techniques. The system contains a reflection high energy electron diffraction (RHEED) apparatus, producing an electron beam with a grazing angle to the substrate of about one degree. The diffracted electrons are projected on a fluorescent screen. Through the diffraction pattern, we can look at the surface as it is cleaned by desorption of the oxide before we deposit and grow semiconducting materials.