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Metamorphic III–V semiconductor lasers grown on silicon

Published online by Cambridge University Press:  14 March 2016

Eric Tournié ,
Laurent Cerutti ,
Jean-Baptiste Rodriguez ,
Huiyun Liu ,
Jiang Wu  and
Siming Chen
Eric Tournié
Affiliation:
Université de Montpellier, and Institut Universitaire de France, France; [email protected]
Laurent Cerutti
Affiliation:
Université de Montpellier, France; [email protected]
Jean-Baptiste Rodriguez
Affiliation:
Université de Montpellier, France; [email protected]
Huiyun Liu
Affiliation:
Department of Electronic and Electrical Engineering, University College London, UK; [email protected]
Jiang Wu
Affiliation:
Department of Electronic and Electrical Engineering, University College London, UK; [email protected]
Siming Chen
Affiliation:
Department of Electronic and Electrical Engineering, University College London, UK; [email protected]
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Abstract

The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling technology for full-scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated sensing systems operating in the mid-infrared (MIR) regime of the spectrum. In this article, we review recent developments, through several approaches, in the direct metamorphic epitaxial growth of various III–V materials-based lasers on silicon substrates. We show that GaAs-based 1.3-μm III–V quantum dot lasers and GaSb-based MIR quantum-well lasers grown on silicon substrates can operate with low threshold current density and high operating temperature, which hold promise for the future.

Keywords

epitaxymolecular beam epitaxy (MBE)III–VSilaser
Type
Research Article
Information
MRS Bulletin , Volume 41 , Issue 3: Metamorphic Epitaxial Materials , March 2016 , pp. 218 - 223
Copyright
Copyright © Materials Research Society 2016 

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