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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

Published online by Cambridge University Press:  31 January 2011

P.C. van der Wilt ,
M.G. Kane ,
A.B. Limanov ,
A.H. Firester ,
L. Goodman ,
J. Lee ,
J.R. Abelson ,
A.M. Chitu  and
James S. Im
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Abstract

Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Keywords

crystallinemicroelectronicspolycrystalSi
Type
Research Article
Information
MRS Bulletin , Volume 31 , Issue 6 , June 2006 , pp. 461 - 465
Copyright
Copyright © Materials Research Society 2006

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References

1Reuss, R.H.Chalamala, B.R.Moussessian, A.Kane, M.G.Kumar, A.Zhang, D.C.Rogers, J.A.Hatilis, M.Temple, D.Moddel, G.Eliasson, B.J.Estes, M.J.Kunze, J.Handy, E.S.Harmon, E.S.Salzman, D.B.Woodall, J.M.Alam, M.A.Murthy, J.Y.Jacobsen, S.C.Olivier, M.Markus, D.Campbell, P.M. and Snow, E.Proc. IEEE 93 (2005) p.1239.CrossRefGoogle Scholar
2Stewart, R.G. in SID Conf. Rec. 20th Int. Display Res. Conf. (Soc. Inf. Display, San Jose, CA, 2000) p.415.Google Scholar
3Menard, E.Lee, K.J.Khang, D.Y.Nuzzo, R.G. and Rogers, J.A.Appl. Phys. Lett. 84 (2004) p.5398.CrossRefGoogle Scholar
4Duan, X.Niu, C.Sahl, V.Chen, J.Parce, J.W.Empedocles, S. and Goldman, J.L.Nature 425 (2003) p.274.CrossRefGoogle Scholar
5Jin, S.Whang, D.McAlpine, M.C.Friedman, R.S.Wu, Y. and Lieber, C.M.Nano Lett. 4 (2004) p.915.CrossRefGoogle Scholar
6For example, see Im, J.S. and Sposili, R.S.MRS Bull. 21 (3) (1996) p.39.CrossRefGoogle Scholar
7For example, see MacDonald, B.A.Rollins, K.MacKerron, D.Rakos, K.Eveson, R.Hashimoto, K. and Rustin, B. in Flexible Flat Panel Displays, Ch. 2, edited by Crawford, G.P. (John Wiley & Sons, Chichester, UK, 2005) p.11.CrossRefGoogle Scholar
8Cannella, V.Izu, M.Jones, S.Wagner, S. and Cheng, I.C.Inf. Display 21 (6) (2005) p.24.Google Scholar
9Weber, A.Deutschbein, S.Plichta, A. and Habeck, A. in SID Int. Symp. Dig. Tech. Papers 33 (Soc. Inf. Display, San Jose, CA, 2002) p.53.Google Scholar
10For example, see Wagner, S.Wu, M. B.Min, G.R. and Cheng, I.C. in Solid State Phenom. 80–81 (2001) p.325.CrossRefGoogle Scholar
11Cheng, I.C.Wagner, S.Bae, S. and Fonash, S.J. in Amorphous and Heterogeneous Silicon-Based Films—2001, edited by Stutzmann, M.Boyce, J.B.Cohen, J.D.Collins, R.W. and Hanna, J.I. (Mater. Res. Soc. Symp. Proc. 664, War-rendale, PA, 2001) p.A26.1.1.Google Scholar
12Cheng, I.C. and Wagner, S. in Amorphous and Nanocrystalline Silicon Science and Technology—2004, edited by Ganguly, G.Kondo, M.Schiff, E.A.Carius, R. and Biswas, R. (Mater. Res. Soc. Symp. Proc. 808, Warrendale, PA, 2004) p. 703.Google Scholar
13For example, see Yamauchi, N. and Reif, R.J.Appl. Phys. 75 (1994) p.3235.CrossRefGoogle Scholar
14Wu, M.Pangal, K.Sturm, J.C. and Wagner, S.Appl. Phys. Lett. 75 (1999) p.2244.CrossRefGoogle Scholar
15Wu, M.Bo, X.Z.Sturm, J.C. and Wagner, S.IEEE Trans. Electron Dev. 49 (2002) p.1993.Google Scholar
16Howell, R.S.Stewart, M.Karnik, S.V.Saha, S.K. and Hatalis, M.K.IEEE Electron Dev. Lett. 21 (2000) p.70.CrossRefGoogle Scholar
17Afentakis, T. and Hatalis, M.K. in Flat Panel Display Technology and Display Metrology II, edited by Kelley, E.F. and Voutsas, A.T. (Proc. SPIE—Int. Soc. Opt. Eng. 4295, Bellingham, WA, 2001) p.95.CrossRefGoogle Scholar
18Lee, Y.Handong, L. and Fonash, S.J.IEEE Electron Device Lett. 24 (2003) p.19.CrossRefGoogle Scholar
19For example, see Givargizov, E.I.Oriented Crystallization on Amorphous Substrates (Plenum Press, New York, 1991).CrossRefGoogle Scholar
20Andrä, G., Bergmann, J.Falk, F. and Ose, E. in Proc. IEEE 26th Photovoltaic Spec. Conf. (IEEE, Piscataway, NJ, 1997) p.639.Google Scholar
21Hara, A.Takeuchi, F. and Sasaki, N.Tech. Dig. Int. Electron Dev. Meet. (IEEE, Piscataway, NJ, 2000) p.209.Google Scholar
22Brotherton, S.D.Ayres, J.R.Fisher, C.A.Glaister, C.Gowers, J.P.McCulloch, D.J. and Trainor, M.J. in Proc. 4th Symp. Thin Film Transistor Technol. (Electrochemical Society Proc. 98–22, Pennington, NJ, 1999) p.25.Google Scholar
23Sameshima, T.Hara, M. and Usui, S.Jpn. J.Appl. Phys. 28 (1989) p.1789.CrossRefGoogle Scholar
24Giust, G.K.Sigmon, T.W.Carey, P.G.Weiss, B. and Davis, G.A.IEEE Electron Dev. Lett. 19 (1998) p.343.CrossRefGoogle Scholar
25Im, J.S.Kim, H.J. and Thompson, M.O.Appl. Phys. Lett. 63 (1993) p.1969.CrossRefGoogle Scholar
26Yamauchi, N. J.Hajjar, J.J. and Reif, R.IEEE Trans. Electron Dev. 38 (1991) p.55.CrossRefGoogle Scholar
27Kahlert, H.J.Burghardt, B.Simon, F. and Stopka, M. in Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, edited by Voutsas, A.T. (Proc. SPIE—Int. Soc. Opt. Eng., 5004, Belling-ham, WA, 2003) p.20.CrossRefGoogle Scholar
28McCulloch, D.J. and Brotherton, S.D.Appl. Phys. Lett. 66 (1995) p.2060.CrossRefGoogle Scholar
29Fork, D.K.Anderson, G.B.Boyce, J.B.Johnson, R.I. and Mei, P.Appl. Phys. Lett. 68 (1996) p.2138.CrossRefGoogle Scholar
30Young, N.D.Bunn, R.M.Wilks, R.W.McCulloch, D.J.Harkin, G.Deane, S.C.Edwards, M.J. and Pearson, A.D. in SID Conf. Rec. 16th Int. Display Res. Conf. (Soc. Inf. Display San Jose, CA, 1996) p.555.Google Scholar
31Young, N.D.Harkin, G.Bunn, R.M.Mc-Culloch, D.J., Wilks, R.W. and Knapp, A.G.IEEE Electron Dev. Lett. 18 (1997) p.19.CrossRefGoogle Scholar
32Smith, P.M.Carey, P.G. and Sigmon, T.W.Appl. Phys. Lett. 70 (1997) p.342.CrossRefGoogle Scholar
33Theiss, S.D.Carey, P.G.Smith, P.M.Wick-boldt, P., Sigmon, T.W.Tung, Y.J. and King, T.J. in Tech. Dig. Int. Electron Dev. Meet. (IEEE, Piscat-away, NJ, 1998) p.257.Google Scholar
34Gosain, D.P.Westwater, J. and Usui, S. in Dig. Tech. Papers Int. Workshop AM-LCDs (Jpn. Soc. Appl. Phys., Tokyo, Japan, 1997) p.51.Google Scholar
35Gosain, D.P.Noguchi, T. and Usui, S.Jpn. J.Appl. Phys. 39 (2000) p.L179.CrossRefGoogle Scholar
36Serikawa, T. and Omata, F.IEEE Electron Dev. Lett. 20 (1999) p.574.CrossRefGoogle Scholar
37Afentakis, T.Hatalis, M.Voutsas, A.T. and Hartzell, J. in Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, edited by Voutsas, A.T. (Proc. SPIE—Int. Soc. Opt. Eng., 5004, Belling-ham, WA, 2003) p.122.CrossRefGoogle Scholar
38Afentakis, T.Hatalis, M.Voutsas, A.T. and Hartzell, J., in SID Int. Symp. Dig. Tech. Papers 35 (Soc. Inf. Display, San Jose, CA, 2004) p.14.Google Scholar
39Shimoda, T. and Inoue, S. in IEEE Tech. Dig. Int. Electron Devices Meet. (IEEE, Piscataway, NJ, 1999) p.289.Google Scholar
40Asano, A. and Kinoshita, T.SID Int. Symp. Dig. Tech. Papers 33 (Soc. Inf. Display, San Jose, CA, 2002) p.1196.Google Scholar
41Sposili, R.S. and Im, J.S.Appl. Phys. Lett. 69 (1996) p.2864.CrossRefGoogle Scholar
42Kim, C.W.Moon, K.C.Kim, H.J.Park, K.C.Kim, C.H.Kim, I.G.Kim, C.M.Joo, S.Y.Kang, J.K. and Chung, U.J. in SID Int. Symp. Dig. Tech. Papers 35 (Soc. Inf. Display, San Jose, CA, 2004) p.868.Google Scholar
43Sposili, R.S. and Im, J.S.Appl. Phys. A 67 (1998) p.273.CrossRefGoogle Scholar
44Jung, Y.H.Yoon, J.M.Yan, M.S.Park, W.K.Soh, H.S.Cho, H.S.Limanov, A.B. and Im, J.S. in Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, edited by Jensen, K.L.Nemanich, R.J.Holloway, P.Trottier, T.Mackie, W.Temple, D. and J. Itoh (Mater. Res. Soc. Symp. Proc. 621, 2001) p.Q.8.3.1.Google Scholar
45Brotherton, S.D.Crowder, M.A.Li-manov, A.B., Turk, B.A. and Im, J.S. in SID Conf. Rec. 21st Int. Display Res. Conf. (Soc. Inf. Display, San Jose, CA, 2001) p.387.Google Scholar
46Voutsas, A.T.IEEE Trans. Electron Dev. 50 (2003) p.1494.CrossRefGoogle Scholar
47Knowles, D.S.Park, J.Y.Im, C.Das, P.Hoffman, T.Burfeindt, B.Muenz, H.Herkom-mer, A., van der Wilt, P.C., Limanov, A.B. and Im, J.S. in SID Int. Symp. Dig. Tech. Papers 36 (Soc. Inf. Display, San Jose, CA, 2005) p.503.Google Scholar
48Im, J.S.Sposili, R.S. and Crowder, M.A.Appl. Phys. Lett. 70 (1997) p.3434.CrossRefGoogle Scholar
49Turk, B.A.Wilt, P.C. van der, Limanov, A.B.Chitu, A.M. and Im, J.S. in Proc. 3rd Korean SID Int. Meet. (Korean Inf. Display Soc., Seoul, Korea, 2003) p.245.Google Scholar
50Limanov, A.B.Wilt, P.C. van der, Choi, J.B.Maley, N.Lee, J.S.Abelson, J.R.Kane, M.G.Firester, A.H. and Im, J.S. in Proc. SID Int. Display Manuf. Conf. (Soc. Inf. Display, Taipei, Taiwan, 2005) p.153.Google Scholar
51Kim, Y.H.Chung, C.H.Yun, S.J.Park, D.J.Kim, D.W.Lim, J.W.Song, Y.H.Moon, J. and Lee, J.H. in Proc. 4th Korean SID Int. Meet. (Korean Inf. Display Soc., Seoul, Korea, 2005) p.269.Google Scholar
52Kane, M.G.Goodman, L.Firester, A.H.Wilt, P.C. van der, Limanov, A.B. and Im, J.S. in IEEE Tech. Dig. Int. Electron Dev. Meet. (IEEE, Piscataway, NJ, 2005) p.1087.Google Scholar