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Engineering and quantum control of single spins in semiconductors

Published online by Cambridge University Press:  06 February 2013

David M. Toyli ,
Lee C. Bassett ,
Bob B. Buckley ,
Greg Calusine  and
David D. Awschalom
David M. Toyli
Affiliation:
Center for Spintronics and Quantum Computation, University of California, Santa Barbara; [email protected]
Lee C. Bassett
Affiliation:
Center for Spintronics and Quantum Computation, University of California, Santa Barbara; [email protected]
Bob B. Buckley
Affiliation:
Center for Spintronics and Quantum Computation, University of California, Santa Barbara; [email protected]
Greg Calusine
Affiliation:
Center for Spintronics and Quantum Computation, University of California, Santa Barbara; [email protected]
David D. Awschalom
Affiliation:
Center for Spintronics and Quantum Computation, University of California, Santa Barbara; [email protected]
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Abstract

The nitrogen-vacancy (NV) center in diamond offers the opportunity to develop quantum technologies that leverage the defect’s atom-like properties using established engineering techniques from the semiconductor industry. While many NV center applications are motivated by the remarkable properties of isolated NV centers in bulk diamond, realizing these technologies requires addressing a number of device and materials engineering challenges unique to creating and controlling individual semiconductor spins. We review recent advances in interfacing NV centers with on-chip electronics that enable control over the defect’s spin and orbital degrees of freedom and review fabrication techniques for creating single NV centers with nanometer-scale placement accuracies. We also discuss efforts, motivated by the success of diamond NV center applications, to identify defect spins with similar properties to the NV center in more technologically mature semiconductors such as SiC.

Keywords

Spintronicdiamondelectron spin resonance
Type
Research Article
Information
MRS Bulletin , Volume 38 , Issue 2: Nitrogen-vacancy centers: Physics and applications , February 2013 , pp. 139 - 143
Copyright
Copyright © Materials Research Society 2013 

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