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Electronic Structure and Band Offsets of High-Dielectric-Constant Gate Oxides

Published online by Cambridge University Press:  31 January 2011

John Robertson
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Abstract

Identifying candidate materials to replace SiO2 as the gate dielectric for complementary metal oxide semiconductor (CMOS) applications is a difficult task. Proper assessment of the critical materials requirements is essential, and it is important to devise an approach to predict materials properties without having to make many unnecessary measurements on high-ĸ materials. Such an approach helps to eliminate unlikely candidates and focus on the most promising ones. Clearly, this type of modeling approach requires an understanding of several physical and chemical characteristics, including the bonding and electronic structure, band alignment with Si, and the nature of the dielectric constant and interface properties. We present a critical assessment of some existing methods and models of materials properties, as well as a comparison of the present modeling approach with some experimentally determined values.

Keywords

band offsetdielectric constantelectronic structurehigh-ĸ dielectric materialsmodeling
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 3: Alternative Gate Dielectrics for Microelectronics , March 2002 , pp. 217 - 221
Copyright
Copyright © Materials Research Society 2002

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