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Elastic strain engineering of ferroic oxides

Published online by Cambridge University Press:  12 February 2014

Darrell G. Schlom ,
Long-Qing Chen ,
Craig J. Fennie ,
Venkatraman Gopalan ,
David A. Muller ,
Xiaoqing Pan ,
Ramamoorthy Ramesh  and
Reinhard Uecker
Darrell G. Schlom
Affiliation:
Department of Materials Science and Engineering, Cornell University and Kavli Institute at Cornell for Nanoscale Science; [email protected]
Long-Qing Chen
Affiliation:
Millennium Science Complex, Materials Research Institute, Penn State University; [email protected]
Craig J. Fennie
Affiliation:
School of Applied and Engineering Physics, Cornell University; [email protected]
Venkatraman Gopalan
Affiliation:
Materials Science and Engineering, Penn State University; [email protected]
David A. Muller
Affiliation:
School of Applied and Engineering Physics, Cornell University andKavli Institute at Cornell forNanoscale Science, Cornell; [email protected]
Xiaoqing Pan
Affiliation:
Department of Materials Science and Engineering, University of Michigan; [email protected]
Ramamoorthy Ramesh
Affiliation:
Oak Ridge National Laboratory; [email protected]
Reinhard Uecker
Affiliation:
Leibniz Institute for Crystal Growth, Berlin; [email protected]
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Abstract

Using epitaxy and the misfit strain imposed by an underlying substrate, it is possible to elastically strain oxide thin films to percent levels—far beyond where they would crack in bulk. Under such strains, the properties of oxides can be dramatically altered. In this article, we review the use of elastic strain to enhance ferroics, materials containing domains that can be moved through the application of an electric field (ferroelectric), a magnetic field (ferromagnetic), or stress (ferroelastic). We describe examples of transmuting oxides that are neither ferroelectric nor ferromagnetic in their unstrained state into ferroelectrics, ferromagnets, or materials that are both at the same time (multiferroics). Elastic strain can also be used to enhance the properties of known ferroic oxides or to create new tunable microwave dielectrics with performance that rivals that of existing materials. Results show that for thin films of ferroic oxides, elastic strain is a viable alternative to the traditional method of chemical substitution to lower the energy of a desired ground state relative to that of competing ground states to create materials with superior properties.

Keywords

Ferroelectricferroicferromagneticmultiferroicoxideoxide molecular beam epitaxystrain
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 2: Elastic Strain Engineering , February 2014 , pp. 118 - 130
Copyright
Copyright © Materials Research Society 2014 

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