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Defects in Ceramic Oxides

Published online by Cambridge University Press:  29 November 2013

Arthur S. Nowick
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Extract

The topic that I am attempting to cover easily requires a whole book to do it justice. To deal with it in a short article, I will focus on a few basic principles that dominate the behavior of defects in oxides and then present some examples taken from well-studied and relatively well-understood materials.

The study of defects in oxides differs from the study of defects in metals and alloys or in semiconductors in several important ways. First, oxides generally have very high melting points so that intrinsic point defect concentrations at temperatures below ~1500°C are usually negligibly small. Second, an oxide does not always maintain the composition at which it was fabricated, as alloys do, but can exchange oxygen with the ambient atmosphere, according to the ambient partial pressure of oxygen, P(O2). Thus, the stoichiometry, and accordingly the defect concentration, can be controlled by annealing in a specific P(O2) atmosphere. Third, and most important, oxides have a high degree of ionicity so that most point defects possess an effective charge. The consequences of this fact are far reaching; some of them are as follows:

1. In a binary oxide, e.g. a metal oxide (MO), there are two sublattices. The diffusion of cations and of anions proceeds each on its own sublattice, involving different point defects. Accordingly, cation and anion diffusion rates can be very different and, in fact, usually are.

Type
Point Defects Part I
Information
MRS Bulletin , Volume 16 , Issue 11 , November 1991 , pp. 38 - 41
Copyright
Copyright © Materials Research Society 1991

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