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Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Published online by Cambridge University Press:  31 January 2011

Brian R. Bennett ,
Mario G. Ancona  and
J. Brad Boos
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Abstract

Research in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1–2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm2/Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n- and p-channel transistors.

Type
Research Article
Information
MRS Bulletin , Volume 34 , Issue 7: Ultimate Scaling of CMOS Logic Devices with Ge and III—V Materials , July 2009 , pp. 530 - 536
Copyright
Copyright © Materials Research Society 2009

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