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Colloidal Quantum Dots of III-V Semiconductors

Published online by Cambridge University Press:  29 November 2013

Arthur J. Nozik  and
Olga I. Mićić
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Extract

Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential barrier region. If the film of the smaller bandgap material is sufficiently thin (thickness less than the de-Broglie wavelength of the charge carriers, which typically requires thicknesses less than about 300 Å for III-V semiconductors), then the charge carriers are confined in one dimension by the potential barriers, and quantization of the energy levels for both electrons and holes can occur (Figure 1).

Type
Semiconductor Quantum Dots
Information
MRS Bulletin , Volume 23 , Issue 2 , February 1998 , pp. 24 - 30
Copyright
Copyright © Materials Research Society 1998

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