Article contents
Circuit Responses to Radiation-Induced Upsets
Published online by Cambridge University Press: 31 January 2011
Abstract
Historically, radiation-induced corruption of data in high-speed complementary metal oxide semiconductor designs has been limited to on-board static random-access memory in various memory caches. Successive generations of scaling, however, have resulted in capacitance reductions in key logic circuits, increasing their vulnerability to these “soft errors.” Charge delivered by radiation events now carries a substantial probability of inducing upsets, not only in bistable elements, but in logic evaluation circuits as well. This article introduces the reader to common logic-circuit topologies in high-speed microprocessors, radiation circuit response mechanisms that can compromise logic evaluation integrity, and existing techniques that mitigate this exposure.
- Type
- Research Article
- Information
- MRS Bulletin , Volume 28 , Issue 2: Single-Event Upsets in Microelectronics , February 2003 , pp. 126 - 130
- Copyright
- Copyright © Materials Research Society 2003
References
- 3
- Cited by