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Blue and Near-Ultraviolet Vertical-Cavity Surface-Emitting Lasers

Published online by Cambridge University Press:  31 January 2011

Arto Nurmikko  and
Jung Han
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Abstract

Vertical-cavity surface-emitting lasers (VCSELs) based on gallium nitride semiconductor heterostructures represent a contemporary focus of research, the aim of which is to develop a new class of planar microdevices in the blue, violet, and near-ultraviolet ranges. We review recent progress in this exploratory area, to highlight the challenges and scientific excitement associated with the efforts that are under way to create flexible, short-wavelength sources for applications expected to range from biomedical diagnostics to solid-state displays and lighting.

Keywords

semiconductor light-emittersblue light-emitting diodesgallium nitride (GaN)nitride semiconductorsvertical-cavity surface-emitting lasers (VCSELs)wide-bandgap semiconductors.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 7: Vertical-Cavity Surface-Emitting Lasers , July 2002 , pp. 502 - 506
Copyright
Copyright © Materials Research Society 2002

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References

1. Blue laser: for example, see Nakamura, S., Semicond. Sci. Technol. 14 (1999) p. R27;CrossRefGoogle Scholar
Blue LED: see Craford, G., MRS Bull. 25 (10) (2000) p. 27.CrossRefGoogle Scholar
2.Gunshor, R.L. and Nurmikko, A.V., eds., II–VI Blue-Green Light-Emitters: Device Physics and Epitaxial Growth, Semiconductors, and Semimetals, Vol. 44 (Academic Press, New York, 1997).Google Scholar
3.Song, Y.K., Zhou, H., Diagne, M., Odzen, I., Vertikov, A., Nurmikko, A.V., Carter-Coman, C., Kern, S., Kish, F.A., and Krames, M.R., Appl. Phys. Lett. 74 (1999) p. 3441.CrossRefGoogle Scholar
4.Kelly, M.K., Ambacher, O., Dimitrov, R., Handschuh, R., and Stutzmann, M., Phys. Status Solidi A 159 (1997) p. R3;3.0.CO;2-F>CrossRefGoogle Scholar
Wong, W.S., Sands, T., and Cheung, N.W., Appl. Phys. Lett. 72 (1998) p. 599.CrossRefGoogle Scholar
5.Song, Y.K., Nurmikko, A.V., Schneider, R.P., Kuo, C.P., Krames, M.R., Kern, R.S., Carter-Coman, C., and Kish, F.A., Appl. Phys. Lett. 76 (2000) p. 1662.CrossRefGoogle Scholar
6.Someya, T. and Arakawa, Y., Appl. Phys. Lett. 73 (1998) p. 3653;CrossRefGoogle Scholar
Langer, R., Barski, A., Simon, J., Pelekanos, N., Konovalov, O., Andre, R., and Dang, L.S., Appl. Phys. Lett. 74 (1999) p. 3610;CrossRefGoogle Scholar
Ng, H.M., Moustakas, T.D., and Chu, S.N.G., Appl. Phys. Lett. 76 (2000) p. 2818;CrossRefGoogle Scholar
Schenk, H.P.D., de Mierry, P., Vennegues, P., Tottereau, O., Laugt, L., Vaille, M., Feltin, E., Beaumont, B., Gibart, P., Fernandez, S., and Calle, F., Appl. Phys. Lett. 80 (2001) p. 174.CrossRefGoogle Scholar
7.Redwing, J.M., Loeber, D.A.S., Anderson, N.G., Tischler, M.A., and Flynn, J.S., Appl. Phys. Lett. 69 (1996) p. 1;CrossRefGoogle Scholar
Krestnikov, I., Lundin, W., Sakharov, A.V., Semenov, V., Usikov, A., Tsatsulnikov, A.F., Alferov, Zh., Ledentsov, N., Hoffmann, A., and Bimberg, D., Appl. Phys. Lett. 75 (1999) p. 1192.CrossRefGoogle Scholar
8.Someya, T., Werner, R., Forchel, A., Catalano, M., Cingolani, R., and Arakawa, Y., Science 285 (1999) p. 1905.CrossRefGoogle Scholar
9.Han, J., Waldrip, K.E., Lee, S.R., Figiel, J.J., Hearne, S.J., Petersen, G.A., and Myers, S.M., Appl. Phys. Lett. 78 (2001) p. 67.CrossRefGoogle Scholar
10.Waldrip, K.E., Han, J., Figiel, J.J., Zhou, H., Makarona, E., and Nurmikko, A.V., Appl. Phys. Lett. 78 (2001) p. 3205.CrossRefGoogle Scholar
11.Hearne, S., Chason, E., Han, J., Floro, J.A., Figiel, J., Hunter, J., Amano, H., and Tsong, I.S.T., Appl. Phys. Lett. 74 (1999) p. 356.CrossRefGoogle Scholar
12.Zhou, H., Diagne, M., Makarona, E., Nurmikko, A.V., Han, J., Waldrip, K.E., and Figiel, J.J., Electron. Lett. 36 (2000) p. 1777.CrossRefGoogle Scholar
13.Margalith, T., Buchinsky, O., Cohen, D.A., Abare, A.C., Hansen, M., DenBaars, S.P., and Coldren, L.A., Appl. Phys. Lett. 74 (1999) p. 3930.CrossRefGoogle Scholar
14.Song, Y.-K., Diagne, M., Zhou, H., Nurmikko, A.V., Schneider, R.P. Jr., and Taguchi, T., Appl. Phys. Lett. 77 (2000) p. 1744.CrossRefGoogle Scholar
15.Jeon, S.-R., Song, Y.-H., Jang, H.-J., Yang, G.M., Hwang, S.W., and Son, S.J., Appl. Phys. Lett. 78 (2001) p. 3265;CrossRefGoogle Scholar
Takeuchi, T., Hasnain, G., Hueschen, M., Kocot, C., Blomqvist, M., Chang, Y.-L., Lefforge, D., Schneider, R., Krames, M.R., Cook, L.W., and Stockman, S.A., Jpn. J. Appl. Phys., Part 2: Lett. 40 (2001) p. L861.CrossRefGoogle Scholar
16.Wierer, J.J., Evans, P.W., Holonyak, N. Jr., and Kellogg, D.A., Appl. Phys. Lett. 72 (1998) p. 2742.CrossRefGoogle Scholar
17.Diagne, M., He, M.Y., Zhou, H., Makarona, E., Nurmikko, A.V., Han, J., Waldrip, K.E., Figiel, J.J., Takeuchi, T., and Krames, M.R., Appl. Phys. Lett. 79 (2001) p. 3720.CrossRefGoogle Scholar
18.He, Y., Zhang, Q., Nurmikko, A.V., Han, J., Takeuchi, T., and Krames, M., in Proc. Int. Symp. on Blue Lasers and Light Emitting Diodes (2002) in press.Google Scholar
19.Ozden, I., Diagne, M., Nurmikko, A.V., Han, J., and Takeuchi, T., Phys. Status Solidi A 188 (2001) p. 139.3.0.CO;2-H>CrossRefGoogle Scholar
20.Ozden, I., Makarona, E., Nurmikko, A.V., Takeuchi, T., and Krames, M., Appl. Phys. Lett. 79 (2001) p. 2532.CrossRefGoogle Scholar