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Atom probe tomography of interfaces in ceramic films and oxide scales

Published online by Cambridge University Press:  08 January 2016

K. Stiller ,
M. Thuvander ,
I. Povstugar ,
P.P. Choi  and
H.-O. Andrén
K. Stiller
Affiliation:
Department of Applied Physics, Division of Materials Microstructure, Chalmers University of Technology, Sweden; [email protected]
M. Thuvander
Affiliation:
Department of Applied Physics, Division of Materials Microstructure, Chalmers University of Technology, Sweden; [email protected]
I. Povstugar
Affiliation:
Department of Microstructure Physics and Alloy Design, Max Planck Institute for Iron Research, Germany; [email protected]
P.P. Choi
Affiliation:
Department of Microstructure Physics and Alloy Design, Max Planck Institute for Iron Research, Germany; [email protected]
H.-O. Andrén
Affiliation:
Department of Applied Physics, Division of Materials Microstructure, Chalmers University of Technology, Sweden; [email protected]
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Abstract

Atomic-scale characterization of interfaces in ceramic materials is needed in order to fully understand their electronic, ionic, mechanical, magnetic, and optical properties. The latest development of laser-assisted atom probe tomography (APT), as well as new specimen preparation methods, have opened the realm of ceramics for structural and chemical characterization with high sensitivity and nearly atomic spatial resolution. This article reviews recent APT investigations of interfaces in thin nitride films and thermally grown oxides: TiAlN layers and oxide scales on alumina- and chromia-formers and Zr alloys. The selected examples highlight the role of interfaces in the decomposition of films and in transport processes.

Keywords

oxidationnitridefilmceramicinsulator
Type
Research Article
Information
MRS Bulletin , Volume 41 , Issue 1: Atom Probe Tomography , January 2016 , pp. 35 - 39
Copyright
Copyright © Materials Research Society 2016 

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