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Zinc Oxide Nanostructure Synthesis on Si(100) by Vapor Phase Transport and the Effect of Antimony Doping on Photoelectric Properties, Morphology, and Structure

Published online by Cambridge University Press:  03 March 2020

Tarek Trad ,
Parker Blount ,
Zuleyma Romero  and
David Thompson
Tarek Trad*
Affiliation:
Department of Chemistry, Sam Houston State University, 1003 Bowers Blvd., Huntsville, TX 77340, U.S.A.
Parker Blount
Affiliation:
Department of Chemistry, Sam Houston State University, 1003 Bowers Blvd., Huntsville, TX 77340, U.S.A.
Zuleyma Romero
Affiliation:
Department of Chemistry, Sam Houston State University, 1003 Bowers Blvd., Huntsville, TX 77340, U.S.A.
David Thompson
Affiliation:
Department of Chemistry, Sam Houston State University, 1003 Bowers Blvd., Huntsville, TX 77340, U.S.A.
*
*(Email: [email protected])
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Abstract

Zinc Oxide (ZnO) has been shown to exhibit semiconducting and piezoelectric dual properties. This has led to a large commercial demand on ZnO for optoelectronics that operate at the blue-ultraviolet regions. Consequently, varying techniques have been devised to create different nanostructures of ZnO. Here, the single step synthesis of ZnO nanostructures was performed on Si(100) substrates with a thin ZnO seed-layer. A modified chemical vapor deposition (CVD) method was developed to accomplish the structure formation. Sb doping of the structures in the gas phase was performed to study its effects on structure and optoelectronic properties. Different structures were realized including nanofilaments, nanoparticles, microflowers, nanorods, nanotubes, and nanocolumns. Only nanorods/columns, and nanotubes are shown in this work. Morphology was examined using scanning electron microscopy (SEM). Energy-dispersive X-ray spectroscopy (EDS) and X-ray powder diffraction (XRD) were used for structural studies. Optoelectronic properties were explored using room-temperature photoluminescence (PL) spectroscopy. PL data show the relative decrease in the number of defects and increase in crystal quality upon increasing reaction time. Significant structural effects were also observed upon doping. Some structural defects might be attributed to the diffusion of Sb ions into the lattices of ZnO, replacement of Zn by Sb, and ionic radii difference. These stacking faults are most likely the reason behind the dominance and broadening of DLE peak.

Keywords

chemical vapor deposition (CVD) (chemical reaction)chemical vapor deposition (CVD) (deposition)luminescencenanostructureoptoelectronic
Type
Articles
Information
MRS Advances , Volume 5 , Issue 31-32: Fabrication of Functional Materials and Nanomaterials , 2020 , pp. 1687 - 1695
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Copyright
Copyright © Materials Research Society 2020

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References

REFERENCES

Look, D. C., Mater. Sci. Eng., B B80 (1-3), 383-387 (2001).CrossRefGoogle Scholar
Gratzel, M., Acc. Chem. Res. 42 (11), 1788-1798 (2009).CrossRefGoogle Scholar
Law, M., Greene, L. E., Johnson, J. C., Saykally, R. and Yang, P., Nat. Mater. 4 (6), 455-459 (2005).CrossRefGoogle Scholar
Nasser, R., Othmen, W. B. H., Elhouichet, H. and Ferid, M., Appl. Surf. Sci. 393, 486-495 (2017).CrossRefGoogle Scholar
Sun, J.-H., Dong, S.-Y., Feng, J.-L., Yin, X.-J. and Zhao, X.-C., J. Mol. Catal. A: Chem. 335 (1-2), 145-150 (2011).CrossRefGoogle Scholar
Poongodi, G., Anandan, P., Kumar, R. M. and Jayavel, R., Spectrochim. Acta, Part A 148, 237-243 (2015).CrossRefGoogle Scholar
Limpijumnong, S., Zhang, S. B., Wei, S.-H. and Park, C. H., Phys. Rev. Lett. 92 (15), 155504/155501-155504/155504 (2004).CrossRefGoogle Scholar
Zeng, D. W., Xie, C. S., Zhu, B. L., Jiang, R., Chen, X., Song, W. L., Wang, J. B. and Shi, J., J. Cryst. Growth 266 (4), 511-518 (2004).CrossRefGoogle Scholar
Zang, C. H., Su, J. F., Wang, B., Zhang, D. M. and Zhang, Y. S., J. Lumin. 131 (8), 1817-1820 (2011).CrossRefGoogle Scholar
Liang, J. K., Su, H. L., Kuo, C. L., Kao, S. P., Cui, J. W., Wu, Y. C. and Huang, J. C. A., Electrochim. Acta 125, 124-132 (2014).CrossRefGoogle Scholar
Baek, S.-D., Kim, Y. C. and Myoung, J.-M., Appl. Surf. Sci. 480, 122-130 (2019).CrossRefGoogle Scholar
Leung, Y. H., Chen, X. Y., Ng, A. M. C., Guo, M. Y., Liu, F. Z., Djurisic, A. B., Chan, W. K., Shi, X. Q. and Van Hove, M. A., Appl. Surf. Sci. 271, 202-209 (2013).CrossRefGoogle Scholar
Xiu, F. X., Yang, Z., Mandalapu, L. J., Liu, J. L. and Beyermann, W. P., Appl. Phys. Lett. 88 (5), 052106/052101-052106/052103 (2006).Google Scholar
Iza, D. C., Munoz-Rojas, D., Jia, Q., Swartzentruber, B. and MacManus-Driscoll, J. L., Nanoscale Res. Lett. 7 (1), 655/651-655/658, 658 pp. (2012).CrossRefGoogle Scholar
Zhang, Y., Zhang, Z., Lin, B., Fu, Z. and Xu, J., J. Phys. Chem. B 109 (41), 19200-19203 (2005).CrossRefGoogle Scholar
Shokry Hassan, H., Kashyout, A. B., Soliman, H. M. A., Uosif, M. A. and Afify, N., Appl. Surf. Sci. 277, 73-82 (2013).CrossRefGoogle Scholar