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Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

Published online by Cambridge University Press:  05 August 2016

Adele Moatti ,
Reza Bayati ,
Srinivasa Rao Singamaneni  and
Jagdish Narayan
Adele Moatti*
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, NC 27695-7906, USA
Reza Bayati
Affiliation:
Intel Corporation, RA3 , Hillsboro, OR 97124, USA
Srinivasa Rao Singamaneni
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, NC 27695-7906, USA
Jagdish Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, NC 27695-7906, USA
*
*(Email: [email protected])

Abstract

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Bi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Keywords

epitaxyferromagneticthin film
Type
Articles
Information
MRS Advances , Volume 1 , Issue 37: Nanotechnology , 2016 , pp. 2635 - 2640
Copyright
Copyright © Materials Research Society 2016 

References

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